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Category: Press Releases

UltraCMOS® True DC RF Switch

      High power handling
      Maximum voltage (DC or AC peak): ±10V on the RF ports
      Total harmonic distortion (THD): –84 dBc
      Configurable 50Ω absorptive or open reflective switch via a single pin (LZ)
      Packaging: 20-lead 4 × 4 mm QFN

UltraCMOS® SPST CATV Switch

      Integrated 0.25 watt terminations
      CTB performance of 90 dBc
      High isolation: 90 dB at 5 MHz, 63 dB at 1000 MHz
      Low insertion loss: 0.5 dB at 50 MHz, 0.70 dB at 1000 MHz
      High input IP2: >80 dBm
      CMOS/TTL single-pin control
      Single +3-volt supply operation
      Extremely low bias: 8 µA @ 3V
      Packaging: 6-lead DFN

UltraCMOS® SPDT RF Switch

      HaRP™ technology-enhanced
      High linearity
      High isolation
      Supports +1.8V control logic
      +105 °C operating temperature
      High ESD tolerance

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac support
      Wide supply range of 2.3V to 5.5V
      +1.8V control logic compatible
      Exceptional isolation
      High linearity across supply range
      High power handling
      Fast switching time of 500 ns
      High ESD tolerance
      Packaging: 16-lead 3 × 3 mm QFN

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband
      (UWB) support
      Exceptional isolation
      Fast switching
      High power handling
      High linearity across supply range
      1.8V control logic compatible
      105°C operating temperature
      High ESD tolerance
      Packaging: 6-lead 1.5 × 1.5 mm DFN

UltraCMOS® SPDT RF Switch

      50Ω characteristic impedance
      Integrated 50Ω 0.25 W terminations
      High input IP3 > +55 dBm
      High isolation 64 dB at 1000 MHz
      Low insertion loss: typically 0.75 dB at 1000 MHz and 0.95 dB at 2000 MHz
      LV CMOS two-pin control
      Single +3 V supply operation
      Low current consumption: 8 µA

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Wide supply range of 2.3–5.5 V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN

UltraCMOS® SPDT RF Switch

      Best-in-class linearity across frequency band
      Exceptional harmonics
      Low insertion loss and high isolation performance
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 × 0.75 mm QFN

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Low spurious performance of -163 dBm/Hz
      Wide supply range of 2.3-5.5V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics performance
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      High ESD performance of 1.5 kV HBM
      Packaging – 32-lead 5 × 5 mm QFN

UltraCMOS® SPDT RF Switch

      HaRP™ technology enhanced
      Supports +1.8V control logic
      Low insertion loss
      High isolation
      ESD performance
      Packaging: 12-lead 3 × 3 mm QFN

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics
      2fo of –121 dBc @ 17 MHz
      3fo of –140 dBc @ 17 MHz
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      Insertion loss of 0.3 dB @ 1218 MHz
      Isolation of 54 dB @ 204 MHz
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 mm QFN