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PE42020

UltraCMOS® True DC RF Switch

      High power handling
      Maximum voltage (DC or AC peak): ±10V on the RF ports
      Total harmonic distortion (THD): –84 dBc
      Configurable 50Ω absorptive or open reflective switch via a single pin (LZ)
      Packaging: 20-lead 4 × 4 mm QFN

PE4270

UltraCMOS® SPST CATV Switch

      Integrated 0.25 watt terminations
      CTB performance of 90 dBc
      High isolation: 90 dB at 5 MHz, 63 dB at 1000 MHz
      Low insertion loss: 0.5 dB at 50 MHz, 0.70 dB at 1000 MHz
      High input IP2: >80 dBm
      CMOS/TTL single-pin control
      Single +3-volt supply operation
      Extremely low bias: 8 µA @ 3V
      Packaging: 6-lead DFN

PE42420

UltraCMOS® SPDT RF Switch

      HaRP™ technology-enhanced
      High linearity
      High isolation
      Supports +1.8V control logic
      +105 °C operating temperature
      High ESD tolerance

PE42423

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac support
      Wide supply range of 2.3V to 5.5V
      +1.8V control logic compatible
      Exceptional isolation
      High linearity across supply range
      High power handling
      Fast switching time of 500 ns
      High ESD tolerance
      Packaging: 16-lead 3 × 3 mm QFN

PE42424

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband
      (UWB) support
      Exceptional isolation
      Fast switching
      High power handling
      High linearity across supply range
      1.8V control logic compatible
      105°C operating temperature
      High ESD tolerance
      Packaging: 6-lead 1.5 × 1.5 mm DFN

PE4257

UltraCMOS® SPDT RF Switch

      50Ω characteristic impedance
      Integrated 50Ω 0.25 W terminations
      High input IP3 > +55 dBm
      High isolation 64 dB at 1000 MHz
      Low insertion loss: typically 0.75 dB at 1000 MHz and 0.95 dB at 2000 MHz
      LV CMOS two-pin control
      Single +3 V supply operation
      Low current consumption: 8 µA

PE42422

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Wide supply range of 2.3–5.5 V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN

PE42426

UltraCMOS® SPDT RF Switch

      Best-in-class linearity across frequency band
      Exceptional harmonics
      Low insertion loss and high isolation performance
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 × 0.75 mm QFN

PE42427

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Low spurious performance of -163 dBm/Hz
      Wide supply range of 2.3-5.5V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN

PE42722

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics performance
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      High ESD performance of 1.5 kV HBM
      Packaging – 32-lead 5 × 5 mm QFN

PE42721

UltraCMOS® SPDT RF Switch

      HaRP™ technology enhanced
      Supports +1.8V control logic
      Low insertion loss
      High isolation
      ESD performance
      Packaging: 12-lead 3 × 3 mm QFN

PE42723

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics
      2fo of –121 dBc @ 17 MHz
      3fo of –140 dBc @ 17 MHz
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      Insertion loss of 0.3 dB @ 1218 MHz
      Isolation of 54 dB @ 204 MHz
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 mm QFN

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  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations
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Power Management

  • 5G antenna-integrated module (AiM) co-designed with Murata
  • High-efficiency 26 GHz, 28 GHz and 39 GHz beamforming front ends supporting bands n257, n258, n261 and n260
  • Advanced, highly integrated package and antenna technology
  • Modular AiM approach for building scalable antenna arrays
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Power Management

  • Unique, patented architecture to enable higher overall system, power conversion efficiency
  • Fully integrated solutions from 15W to 160W
  • Virtually lossless (typ. 98% peak) conversion and soft-switching topology
  • Parallel operation to higher power levels
  • Available through our parent company Murata
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RF Mixers & Limiters

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  • Highly integrated, reliable solutions in a small form factor
  • Variety of packaging options for maximum design flexibility
  • Best-in-class ESD and reliability
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Front End Modules

  • Industry-leading monolithic Wi-Fi RF front-end solutions
  • High linearity performance for Wi-Fi 6 and W-Fi 6E
  • Compact form factors integrating high-performance RF, analog and digital
  • Best-in-class ESD and reliability
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  • Monolithic CMOS solution that integrates RF, analog and digital
  • Digital control interface with parallel and serial programming options
  • Best-in-class ESD and reliability
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RF Attenuators

  • High linearity, fast switching time with wide bandwidth
  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability
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RF Switches

  • Industry-leading RF performance
  • HaRP™ technology enhancement
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Best-in-class ESD and reliability
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