UltraCMOS® SPDT RF Switch
The PE4250 is a HaRP™-enhanced reflective SPDT RF switch for use in general switching applications and mobile infrastructure. This device offers a flexible supply voltage of 3.3/5V, single-pin or complementary pin control inputs, and 4000V ESD tolerance. It presents a simple alternative solution to pin diode and mechanical relay switches.
UltraCMOS® SP4T RF Switch
The PE42443 is a HaRP™ technology-enhanced SP4T RF switch that supports a frequency range from 1.8 GHz to 5 GHz. It delivers extremely low insertion loss, high linearity and fast switching time with high input power handling capability making this device ideal for hybrid beamforming and for 5G massive MIMO applications. No blocking capacitors are […]
UltraCMOS® SP4T RF Switch
The PE42444 is a HaRP™ technology-enhanced SP4T RF switch that supports a frequency range from 1.8 GHz to 5 GHz. It delivers extremely low insertion loss, high linearity and fast switching time with high input power handling capability making this device ideal for hybrid beamforming and for 5G massive MIMO applications. No blocking capacitors are […]
UltraCMOS® SP4T RF Switch
The PE42545 is a HaRP™ technology-enhanced reflective SP4T RF switch die that supports a wide frequency range from 9 kHz to 67 GHz. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement (T&M), 5G mmWave, microwave backhaul, radar and satellite communication applications. No blocking […]
UltraCMOS® SP4T RF Switch
The PE42546 is a HaRP™ technology-enhanced reflective SP4T RF switch die that supports a wide frequency range from 9 kHz to 52 GHz. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement (T&M), 5G mmWave, microwave backhaul, radar and satellite communication applications. No blocking […]
UltraCMOS® SP4T RF Switch
The PE42445 is a HaRP™ technology-enhanced SP4T RF switch designed for use in 4G/5G wireless infrastructure and other high performance RF applications. It is comprised of four symmetric RF ports with very high isolation up to 8.5 GHz. The PE42445 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology. pSemi’s HaRP […]
UltraCMOS® SP4T RF Switch
The PE42446 is a HaRP™ technology-enhanced SP4T RF switch designed for use in 4G/5G wireless infrastructure and other high performance RF applications. It is comprised of four symmetric RF ports with very high isolation up to 8.5 GHz. The PE42446 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology. pSemi’s HaRP […]
UltraCMOS® SPDT RF Switch
The PE423211 is a HaRP™ technology-enhanced reflective 50Ω SPDT RF switch designed for use in high-performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth® and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 × […]
UltraCMOS® SP4T RF Switch
The PE42447 is a HaRP™ technology-enhanced SP4T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers extremely low insertion loss and high linearity with high input power handling capability making this device ideal for hybrid analog beamforming and in 5G massive MIMO (multi-input multi-output) applications. No blocking capacitors are […]
UltraCMOS® SP4T RF Switch
The PE42548 is a HaRP™ technology-enhanced reflective SP4T RF switch that supports a wide frequency range from 9 kHz to 30 GHz. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement (T&M), 5G mmWave, microwave backhaul, radar and satellite communication applications. No blocking capacitors […]