Technology Advantage

Best-in-Class Solutions

Semiconductor Technologies

pSemi has a 30-year history of leading semiconductor technology development. From the invention of RF SOI to our innovation in the RF front end, our team continuously transforms what “can’t be done” into an industry first. After decades of advancing SOI for RF applications, we now readily apply other semiconductor technologies to further optimize our product offerings. We focus both on the process and the overall solution. We continue to develop custom processes—as in our proprietary UltraCMOS® technology platform—but we also leverage off-the-shelf technologies. Our team evaluates each solution and uses the best combination of state-of-the-art semiconductor technologies to meet the market’s requirements.
Silicon-on-Insulator Invention

UltraCMOS® Technology

Our UltraCMOS® technology—a patented, advanced form of silicon-on-insulator (SOI)—enables pSemi to offer a market-leading combination of large- and small-signal performance. With its outstanding RF and microwave properties, SOI provides an ideal substrate for integration. When paired with high-volume CMOS—the most widely-used semiconductor technology—the result is a reliable, repeatable technology platform that offers superior performance compared to other mixed-signal processes.
Silicon-on-Insulator Invention

UltraCMOS+™ Technology

Building on 16 generations of continuous innovation in our UltraCMOS® process, pSemi proudly introduces UltraCMOS+—our most advanced technology to date. This breakthrough platform enables us to deliver exceptionally differentiated products that redefine the limits of RF performance. With linearity approaching that of mechanical relays (up to 95 dBm), power handling capabilities rivaling high-breakdown technologies like GaN (tens of watts), and noise figure as low as incumbent technologies like GaAs, UltraCMOS+ combines unmatched performance with the proven scalability, efficiency, lower cost, size, and robustness of CMOS.


Whether for rugged high-power environments or ultra-precise applications, UltraCMOS+ empowers our customers to simplify their systems—often through higher integration or eliminating the need for filters—while reducing overall cost and design complexity.

Markets

Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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