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The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee® applications as well as Bluetooth® (including Bluetooth Low Energy). The PE562212 is also capable of low-to-medium Wi-Fi® throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-on insulator (SOI) technology.

Description2.4 GHz SOI IoT FEM
Min Freq.2400 MHz
Max Freq.2483.5 MHz
P1dB/P0.1dB (dBm)21.0 / –
Attn Range (dB)0–15
Attn Step (dB)1
Tx Gain (dB)23
Rx Gain (dB)15.0
VDD Range (V)3.0–3.6
Package (mm)1.8×1.8×0.63
Operating Frequency (GHz)2.4
Tx Gain Control (dB)15
Tx Gain Step (dB)1
Rx NF (dB)1.6
Bypass Loss (dB)0.6
Supply Voltage (V)3.0–3.6
Package14L LGA

Key Features

      Monolithic IC enabling ultra-compact module for PCB-limited applications
      Integrated PA with up to +21 dBm output power
      Adjustable output power with 15 dB range, 1 dB steps
      Integrated LNA (1.5 dB noise figure, typ.) with low loss bypass path (0.9 dB, typ.)
      Low-to-medium throughput Wi-Fi capability
      Packaging: 14-lead 1.8 × 1.8 × 0.63 mm LGA (MSL3)

Products displayed on this site are protected under one or more of the following U.S. Patents.