UltraCMOS® SP4T RF Switch

UltraCMOS® SP4T RF Switch

PE42540

The PE42540 is a HaRP™-enhanced Absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and ATE market. It is comprised of four symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a two-pin low voltage CMOS control interface and an optional external Vss feature. High ESD tolerance and no blocking capacitor requirements give this switch excellent integration and ruggedness.

Specifications

DescriptionSP4T (A)
Min Freq.10 Hz
Max Freq.8 GHz
Max Typ. IL (dB)1.2
Min Typ. IL (dB)0.7
Max Typ. Iso (dB)84
Min Typ. Iso (dB)27
P1dB/P0.1dB (dBm)33.0 / –
IIP3 (dBm)58
Max Power Rating (dBm)30
Max Temp (ºC)85
VDD Range (V)3.0–3.6
Switching Time5 µs
ESD HBM (V)2000
Package (mm)5x5
Package32L LGA
PCN/EOL

PCN – August 31, 2021: Manufacturing Site, Ordering codes change

PCN – September 14, 2018: Electrical Test – location change, Manufacturing Site – assembly site change, Ordering codes change

PCN – November 17, 2017: Wafer Fabrication Process, Ordering codes change

PCN – February 15, 2017: Assembly Process – New package laminate, Ordering codes change

Key Features

      HaRP™ technology-enhanced
      High linearity
      Low insertion loss
      High isolation
      Maximum power handling
      High ESD tolerance
      Packaging: 32-lead 5 × 5 mm LGA

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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