Peregrine Semiconductor Expands MPAC–Doherty Product Family to Support GaN Power Amplifier Frequencies

The MPAC–Doherty Portfolio Now Extends From 1.8 to 3.8 GHz with Three Pin-Compatible Products—the PE46120, PE46130 and PE46140

BEIJING – EDI CON 2016 – April 19, 2016 – In booth #309 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140. These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization. Designed for the LTE and LTE-A wireless-infrastructure transceiver market, the MPAC–Doherty product family now extends from 1.8 to 3.8 GHz with three separate, pin-compatible parts.

Peregrine Semiconductor expands the MPAC–Doherty product family to support gallium nitride (GaN) power amplifier frequencies.“Phase and amplitude control is critical to the future of communications, where everything from LTE and 5G to radar will rely on the efficient exchange of data,” says Kinana Hussain, director of marketing at Peregrine Semiconductor. “Peregrine’s monolithic phase and amplitude controllers will support this future. Today’s addition of two integrated products to Peregrine’s MPAC–Doherty product family is only the beginning. Upcoming products in the MPAC family will support beamforming, full wireless duplex and 5G applications. Furthermore, the entire MPAC portfolio will continue to showcase the intelligent integration capabilities of Peregrine’s UltraCMOS technology.”

Because the PE46130 and PE46140 are based on UltraCMOS technology, they deliver the intelligent integration benefits—reliability, flexibility, smaller footprint, configurability and greater system capability—that cannot be matched by gallium arsenide (GaAs) solutions. Each MPAC–Doherty product eliminates the need for discrete components and integrates a 90-degree RF splitter, 5-bit digital phase shifters, a 4-bit digital step attenuator and a digital serial peripheral (SPI) interface on a single monolithic die.

The PE46130 and PE46140 are ideal for optimizing gallium nitride (GaN)-based Doherty PAs, which are preferred at higher frequencies. Low-frequency Doherty amplifiers are typically based on laterally diffused metal oxide semiconductor (LDMOS) technology as LDMOS offers efficiency and cost advantages at frequencies less than 2.0 GHz. However, at higher frequencies, this efficiency breaks down and GaN-based Doherty PAs are used for their ability to maintain performance and meet high power density requirements. The UltraCMOS PE46130 covers a frequency range of 2.3 to 2.7 GHz and PE46140 extends from 3.4 to 3.8 GHz.

In Doherty amplifier architectures, the PE46130 and PE46140 reduces the bill of materials (BOM) by improving the overall yield of expensive Doherty power amplifier assemblies utilizing high efficiency GaN transistors. Additionally, these controllers offer performance advantages in power added efficiency, linearity across the frequency range, Doherty bandwidth through better matching and increased effectiveness of the digital pre-distortion (DPD) loop. The maximum tuning flexibility enables uniformity and repeatability between transceiver paths, while increasing system reliability. The monolithic controllers can be programmed remotely through the digital interface to accommodate varying field requirements. This flexibility allows engineers to adjust the phase and amplitude in real-time for operational and environmental factors.

Features, Packaging, Pricing and Availability
Aside from supporting different cellular frequency bands, the PE46130 and PE46140 are similar in their features and performance advantages. The controllers cover a phase range of 87.2 degrees in 2.8-degree steps and an attenuation range of 7.5 dB in 0.5 dB steps. The PE46130 and PE46140 deliver high linearity of greater than 60 dBm IIP3 and extremely low power consumption of 0.35 mA. Uniquely, each controller provides high power handling of 35 dBm P0.1dB and high port-to-port isolation of 30 dB. UltraCMOS technology enables the controllers to deliver superior ESD performance of at least 1 kV on all RF pins, an extended temperature range up to +105-degrees Celsius and a wide power supply range from 2.3 to 5.5V. Each controller is offered in a RoHS compliant, 32-lead 6 x 6 mm QFN.

Samples and evaluation kits are now available for PE46130 and PE46140, and volume-production parts for PE46130 are available now. The PE46130 is $9.37 each for 1K-quantity orders, $7.60 each for 5K-quantity orders and $7.03 each for 10K-quantity orders. The PE46140 is $10.31 each for 1K-quantity orders, $8.36 each for 5K-quantity orders and $7.73 each for 10K-quantity orders.

ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine products are the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 240 filed and pending patents and has shipped over 3.5 billion UltraCMOS units. For more information, visit https://psemi.com.

###

The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.

 

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

Skip to content