RF Attenuators

RF Attenuators

Key Features

RF Product Catalog

View the pSemi 2025–2026 Product Catalog to see our complete RF product portfolio.

Glitchless RF Digital Step Attenuators

ProductStoreDatasheetDescriptionMin Freq.Max Freq.Min Typ. IL (dB)Max Typ. IL (dB)IIP3 (dBm)Attn Range (dB)Attn Step (dB)InterfaceBitsPackagePackage (mm)Attenuation Accuracy (dB @ 1 GHz)Switching TimeESD HBM (V)
PE43711
7-bit; 128 states9 kHz6 GHz1.32.4570.00–31.750.25/0.5/1.0Parallel (Latched, Direct), Serial724L QFN4x4±(0.15 + 1.5% of setting)275 ns3000
PE43712
7-bit; 128 states9 kHz6 GHz1.32.45570.00–31.750.25/0.5/1.0Parallel (latched, direct); Serial-addressable732L QFN5x5±(0.20 + 1.5% of setting)275 ns3000
PE43713
7-bit; 128 states9 kHz6 GHz1.32.45570.00–31.750.25/0.5/1.0Parallel (latched, direct); Serial-addressable732L QFN5x5±(0.20 + 1.5% of setting)275 ns3000

75Ω Wired Broadband RF Digital Step Attenuators

ProductStoreDatasheetDescriptionMin Freq.Max Freq.Min Typ. IL (dB)Max Typ. IL (dB)IIP3 (dBm)Attn Range (dB)Attn Step (dB)InterfaceBitsPackagePackage (mm)Attenuation Accuracy (dB @ 1 GHz)Switching TimeESD HBM (V)
PE4314
6-bit; 64 states1 MHz2500 MHz11.5580.00–31.500.5Parallel (latched; direct); Serial620L QFN4x4±(0.15 + 3% of setting)370 ns1500
PE43665
6-bit; 64 states1 MHz2000 MHz1.41.8520.00–31.500.5Parallel (latched; direct); Serial620L QFN4x4±(0.15 + 4% of setting)1 ns500

General-purpose RF Digital Step Attenuators

ProductStoreDatasheetDescriptionMin Freq.Max Freq.Min Typ. IL (dB)Max Typ. IL (dB)IIP3 (dBm)Attn Range (dB)Attn Step (dB)InterfaceBitsPackagePackage (mm)Attenuation Accuracy (dB @ 1 GHz)Switching TimeESD HBM (V)
PE4312
6-bit; 64 states1 MHz4000 MHz1.32.1590–31.500.5Parallel (Latched, Direct), Serial620L QFN4x4±(0.15 + 2% of setting)500 ns1500
PE43205
2-bit; 4 states35 MHz6 GHz0.51.05610.00–18.006Parallel212L QFN3x30.129 ns2000
PE43508
6-bit; 64 states9 kHz55 GHz2.25.9500.00–31.500.5/1.0Parallel (Latched, Direct), Serial, Serial Addressable6Flip Chip'+(1.00+4.5% of setting) / -1330 ns1000
PE43610
6-bit; 64 states9 kHz13 GHz1.63500.00–31.500.5/1.0Parallel (Latched, Direct), Serial, Serial Addressable624L LGA4x4'+(1.00+4.5% of setting) / -1330 ns1000
PE43614
6-bit; 64 states9 kHz45 GHz35.8500.00–31.500.5/1.0Parallel (Latched, Direct), Serial, Serial Addressable624L LGA4x4'+(1.00+4.5% of setting) / -1330 ns1000
PE43620
2-bit; 4 states50 MHz3000 MHz0.60.7610–18.06/12/2018Parallel212L QFN3x3±(–0.25/+0.40 of setting)30 ns2000
PE43650
5-bit; 32 states9 kHz6 GHz2.429580.00–15.500.5Parallel (Latched, Direct), Serial524L QFN4x4±(0.3/+0.30 of setting)4000 ns500
PE43670
7-bit; 128 states9 kHz4000 MHz1.92.4590–31.750.25Parallel (Latched, Direct), Serial Addressable732L QFN5x5±(0.2/+0.15 of setting)4000 ns500
PE43704
7-bit; 128 states9 kHz8 GHz1.32.9610.00–31.750.25/0.5/1.0Parallel (Latched, Direct), Serial, Serial Addressable732L QFN5x5'+(0.15 + 4.5% of setting), –(0.1 + 2% of setting)1100 ns1500
PE43705
7-bit; 128 states50 MHz8 GHz1.32.4580.00–31.750.25/0.5/1.0Parallel (Latched, Direct), Serial, Serial Addressable732L QFN5x5'+(0.15 + 1.5% of setting), –(0.1 + 1% of setting)1000 ns1500

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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