Remembering Ron Reedy: A Visionary Behind Peregrine Semiconductor’s Legacy 

The semiconductor industry has lost one of its most influential pioneers with the passing of Ronald E. Reedy, co-founder of Peregrine Semiconductor. Known for his visionary leadership and groundbreaking work in silicon-on-sapphire (SOS) technology, Reedy leaves behind a legacy that continues to shape the future of wireless communications and integrated circuits. 

A Career Rooted in Innovation

Ron Reedy’s journey began with a strong academic foundation. He graduated from the United States Naval Academy with a degree in electrical engineering, followed by a master’s from the Naval Postgraduate School, and ultimately a Ph.D. in Electrical Engineering and Applied Physics from UC San Diego. 

His early career at the Naval Ocean Systems Center (NOSC) focused on silicon CMOS processing. It was here that Reedy, alongside colleagues Mark Burgener and Graham Garcia, published a pivotal 1988 paper proving that ultra-thin SOS films could support high-performance CMOS circuitry. This breakthrough laid the foundation for what would become Peregrine Semiconductor. 

Founding Peregrine Semiconductor 

In 1990, Reedy co-founded Peregrine Semiconductor with Mark Burgener and Rory Moore. Their mission was bold: to commercialize SOS technology for radio frequency (RF) applications. The trio’s vision led to the development of UltraCMOS®, a patented technology that revolutionized RF design by integrating multiple functions into a single chip. 

Under Reedy’s leadership as CEO and later CTO, Peregrine grew into a fabless chip designer that shipped hundreds of millions of integrated circuits. The company went public in 2012 and was acquired by Murata Manufacturing Company in 2014 for $471 million. 

A Legacy of Excellence 

Reedy’s contributions were recognized in 2011 when he and Burgener received the IEEE Daniel E. Noble Award for Emerging Technologies, honoring their work in making SOS commercially viable for wireless communications.  

Even after retiring in 2015, Reedy remained active in the tech world. He founded Skeyeon, a company focused on deploying satellite constellations in Very Low Earth Orbit (VLEO) for earth imaging, showcasing his continued commitment to pushing technological boundaries. 

More Than an Engineer 

Ron Reedy was not just a technologist—he was a mentor, a contrarian thinker, and a passionate advocate for innovation. His philosophy, captured in his own words—“Be different or die”—encouraged others to challenge norms and pursue bold ideas. 

He also gave back to the academic community, serving on the Council of Advisors for UCSD’s Jacobs School of Engineering and the Gordon Leadership Center, helping shape future generations of engineers. 

Final Thoughts 

Ron Reedy’s passing marks the end of an era, but his impact will endure. From pioneering SOS technology to transforming RF communications, his work laid the groundwork for many of the wireless devices we rely on today. As we remember his life and legacy, we honor a man who truly changed the world—one chip at a time. 

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
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    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
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    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
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    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
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    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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Front End Modules

RF Phase & Amplitude Control

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