Peregrine Semiconductor Expands European Operations

UltraCMOS™ RFIC design, manufacturing and sales centered in Aix-en-Provence, France

Aix-en-Provence, France, March 10, 2010 — Peregrine Semiconductor Corporation (San Diego, CA, USA), the leading supplier of high-performance RF CMOS and mixed-signal communications integrated circuits (ICs), today announced the expansion of its European design and manufacturing operations and the opening of a new facility located in Aix-en- Provence, France. Peregrine Semiconductor Europe (PSE) operations include RF integrated circuit (RFIC) design and engineering at its design center in Aix-en-Provence, France; IC wafer manufacturing from wafer foundry Sapphicon in Australia and UMC in Taiwan; assembly and packaging from Hybritech Composants Microelectroniques (HCM) France; and back-end testing at partner Rood Microtec in Germany. PSE activities will focus on developing new RFIC products of European content to better support specific European design requirements, as well as providing design services for Peregrine’s next-generation UltraCMOS™ RFIC portfolio sold worldwide.

“We are extremely pleased to be expanding our commitment to a country, and a region, which have been instrumental to the worldwide adoption of UltraCMOS™ silicon-on-sapphire (SOS) as the IC process technology of choice for RF designs,” commented Jim Cable, CEO and president of parent-company Peregrine Semiconductor Corporation. “In a time of widespread economic turmoil, Peregrine is among the exceptions in being able to post positive revenue growth and expand our design and manufacturing capabilities to further demonstrate our commitment to the European RF engineering community. We are very encouraged by the support of our customers as well as the talented staff that have joined us,” he concluded.

Peregrine Semiconductor Europe operates as a subsidiary of Peregrine Semiconductor Corporation under the direction of Pascal LeBohec. Mr. LeBohec also manages international sales for Peregrine’s high-reliability IC business, which originated more than a dozen years ago and continues today with customers such as Astrium, Thales Alenia Space, and Tesat and RUAG, all member-companies of the European Space Agency (ESA) which recognized the market-leading performance benefits of UltraCMOS™ by qualifying Peregrine’s phase-locked loop frequency synthesizers (PLLs) for adoption into their space satellite programs. Today, Peregrine devices are in flight with some of the world’s largest  satellite programs, including Globalstar, ExoMars, Glonass and Gallileo.

“I am proud to be part of a globally conscious company that invests in the creation of jobs and opportunities to develop specific strengths in support of its European customers,” said Mr. LeBohec. “Some of the world’s most visionary RF designs originate in Europe, and Peregrine’s UltraCMOS technology provides the ideal RF front-end solution,” he added.

The first devices originating from the new European operation are world-class, next-generation PLLs, which provide exceptional RF performance demanded by the rigors of rad-hard space and other high-reliability applications. In addition to its broad performance benefits, there are fundamental properties of UltraCMOS technology which make it exceptionally green: devices built on CMOS-based UltraCMOS consume dramatically less power than high-voltage processes such as SiGe or GaAs; and enable high levels of monolithic integration, resulting in smaller die, fewer external components in the design and less eWaste. In particular, while Reduction of Hazardous Substance (RoHS) initiatives across Europe are pressing the strict prohibition of carcinogens such as gallium-arsenide and its associated arsenic slurries, UltraCMOS RFICs, manufactured with a sapphire substrate, offer a more environmentally friendly option to forward-looking, earth- conscious engineering teams.

About Environmentally-friendly UltraCMOS™ Technology

UltraCMOS mixed-signal process technology is a patented advancement of silicon-on-insulator (SOI) technology on a sapphire substrate providing high yields, competitive costs and a “green” alternative to GaAs-based technologies. UltraCMOS delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and high levels of integration are paramount. These measureable power and size savings offer advantages for both manufacturers and consumers, including longer battery life, smaller batteries, lower power consumption and bills, less electronic waste…and a greener Earth. Further, the company’s revolutionary HaRP™ and DuNE™ technologies further exploit the fundamental benefits of silicon-on-sapphire, enabling dramatic improvements in harmonic  results, linearity, power handling and overall RF performance which today remain unmatched by any other RF process technology.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets. Manufactured on the Company’s proprietary UltraCMOS mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.

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The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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Power Management

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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