Peregrine Semiconductor Ships 300 Millionth UltraCMOS™ RFIC

Global adoption of Company’s Silicon-on-Sapphire technology intensifies

San Diego, California, July 22, 2008 Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced that it has shipped its 300 millionth UltraCMOS™ RFIC.  The milestone was reached with an order for Peregrine’s PE42672 SP7T RF switches that are designed into RF transmit and front-end modules for cellular handsets supporting the WCDMA, HSPA, EDGE and GSM/GPRS networks, currently the fastest growing segment of the wireless market.

The HaRP™-enhanced PE42672 3G antenna switch utilized in the WCDMA design is a market-leading high-throw count RF switch that was introduced into the market in October 2005, and began shipping into major handset manufacturers throughout 2007 and 2008. The 3G mobile user demand for higher data rates is creating an unprecedented level of complexity in the RF front-end, and higher levels of integration are key to meeting customer requirements for exceptionally small form factors, cutting-edge features, and quick time-to-market. The superior linearity performance and reliability of Peregrine UltraCMOS RFICs delivered in a single-chip solution are playing a critical role in the design of industry-leading RF modules.

“We are extremely pleased to have achieved this milestone,” commented Jim Cable, Peregrine’s CEO. “It speaks to the widespread adoption of our UltraCMOS technology into very high-volume commercial RF applications. Our momentum is strong: at the close of 2005, we had shipped a cumulative 20 million units since the inception of the company. By the end of 2006, we nearly quadrupled that output and reached a cumulative 70 million units. Today, we are manufacturing almost 4 million units per week have shipped our 300 millionth unit. Our ability to earn this high-volume business in demanding, high-growth applications such as the cellular handset and ramp our production at such a tremendous rate — is indicative of the disruptive capability of UltraCMOS and Peregrine’s staying power,” he added.

“We continue to hear very favorable comments about Peregrine RF switches, and are seeing them in a number of mobile phones,” commented Mark Christensen, RF Analyst for Prismark Partners (New York, NY, USA). “The high levels of integration and extremely high performance afforded by the UltraCMOS process allows for new front-end architectures that can handle the complexities of multi-band, multi-mode wireless applications. Peregrine’s success with global manufacturers in cost-sensitive markets should ultimately support the proliferation of this technology,” he added.

Historically, pin-diodes and GaAs-based devices held a dominant market position in the RF front end. However, as the demand for complex functionality in the front-end increased, designers sought a path toward integration of digital functionality. UltraCMOS technology offers the industry’s only solution for high- performance RF combined with digital control, and the innovative flip-chip die for unprecedented space and cost savings.

About UltraCMOS Technology and the HaRP™ Technology Invention

UltraCMOS mixed-signal process technology is a proprietary, patented variation of silicon-on insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed- signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high- performance wireless applications. The Company’s revolutionary HaRP™ technology enables dramatic improvements in harmonic results, linearity and overall RF performance; specifications required by the 3GPP standards body for GSM/WCDMA applications which are unmatched in the industry. These significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and aerospace and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com

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The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS and HaRP are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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Front End Modules

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