EDI CON 2016 Speaking Schedule

Tuesday, April 19, 2016 

10:20 – 10:40: Optimizing Beamforming Through Intelligent Integration  – CK Sun
11:40 -12:00: Optimizing Doherty Amplifier Yield & Performance Through Integrated Phase & Amplitude Control  – Eric Song
13:00-13:40: Why High Frequency RF Applications Need CMOS Technology  – CK Sun

Visit Peregrine at EDI CON Booth #309 from April 19-21, 2016.

China National Convention Center
Beijing, China

Optimizing Beamforming Through Intelligent Integration

In emerging communications standards, integration and faster array reconfiguration bring tangible benefits to beamforming systems employing simultaneous multi-user techniques and multi-element antenna arrays. These benefits include faster tracking of users, higher data rates and lower power consumption through improved signal strength. The key to achieving this performance will be more intelligent arrays where more of the array configuration is delegated to the gain and phase shifter elements, and increasing the accuracy of these elements. This session will explore how Peregrine Semiconductor’s UltraCMOS® technology and intelligent integration allow increased resolution and memory elements to be added to traditional core chips. These integrated core chips allow preloading of configurations that can be automatically cycled at high speeds, resulting in more accurate beam formation.

Optimizing Doherty Amplifier Yield & Performance Through Integrated Phase & Amplitude Control

Any engineer who’s been tasked with implementing a Doherty power amplifier for a wireless base-station transmitter can attest to the difficulties associated with Doherty amplifier optimization. Any mismatch or misalignment in phase and amplitude between the Doherty architecture’s carrier and peaking paths can quickly contribute to higher manufacturing costs and degradation of the overall performance. This session will explain how to optimize Doherty amplifier yield and performance through a monolithic solution that offers integrated phase and amplitude control.  By using a monolithic controller, wireless-infrastructure vendors can increase system performance, reduce bill of materials (BOM) costs, improve system reliability and maximize tuning flexibility.

Why High Frequency RF Applications Need CMOS Technology

CMOS is now extending its reach to the microwave and millimeter frequency ranges and displacing gallium arsenide (GaAs) and other compound solutions that have historically serviced these high frequency markets. From 5G and wireless backhaul to automotive radar, high frequency applications are on the rise. CMOS offers many performance advantages over traditional III-V MMIC technology offerings, and this session will explore the benefits of CMOS technology in the microwave and millimeter product space. This workshop will also discuss the technology, device and design factors affecting high frequency IC performance.

 

 

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Charge Pump Capacitor Divider

    Unique, patented architecture to enable higher overall system, power conversion efficiency
    Fully integrated solutions from 15W to 160W
    Virtually lossless (up to 99% peak) conversion and soft-switching topology
    Parallel operation to higher power levels
    Available through our parent company Murata
  • 2-Stage Buck Regulators

    Family of DC-DC buck voltage regulators ICs and modules for telecoms, datacoms, server and storage applications
    Compact solution size offering best-in-class efficiencies for low profile applications (<1.2mm)
    Fully programmable via I2C and with accurate on-board telemetry
    Available through our parent company Murata
  • 2-Stage Boost Regulators - LED Backlight Drivers

    Ultra-high efficiency (up to 96%) LED boosts for LCD displays
    Product family includes products for 1-cell, 2-cell, and 3-cell inputs such as tablets, notebooks and 2-in-1 convertibles
    Enables very low profile (<0.7 mm) solutions and halves power-conversion losses compared to leading alternatives
    Up to 15-bit resolution via I²C or PWM control
    High accuracy with tight matching at low LED current
  • Multi-level Converters

    Industry-first 4-level and 3-level conversion for fixed input voltages (USB_PD)
    Configurable as charge pump divide-by-3 and divide-by-2 for variable input voltages (USB_PPS)
    Wide range input voltage 4.5V to 18V compatible with USB and wireless charging Qi sources
    Reverse boost capability
    High-accuracy current and voltage telemetry
    Best-in-class efficiency for low-profile applications (<1 mm)
    Targets fast-charging battery applications

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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