Peregrine Semiconductor Expands European Operations Again

Design, development, and sales operations facility for UltraCMOS® products furthers Peregrine Semiconductor’s global design and sales support capabilities

Reading, UK, Sept. 17, 2012 – Peregrine Semiconductor Corporation (NASDAQ: PSMI), a fabless provider of high-performance radio-frequency (RF) integrated circuits (ICs), today announced the expansion of its European operations with the opening of a design, manufacturing, and sales facility in Reading, United Kingdom (UK). The Company’s UK facility focuses on developing dedicated RFIC products of European content, to better address the European requirements; including those of the European commercial, industrial, and high-reliability (hi-rel) markets, which have been a cornerstone for Peregrine’s successful growth across Europe. The facility will also provide design services for Peregrine Semiconductor’s next-generation UltraCMOS® RFIC portfolio, sold worldwide.

 “We are pleased to expand our commitment to a region that has been instrumental in the worldwide adoption of our UltraCMOS technology as the RFIC process technology of choice,” said Dave Shepard, vice president of Peregrine Semiconductor’s High-Performance Solutions business unit. “Some of the world’s most visionary designs originate in the European region, and this expansion of our global design, sales support, and manufacturing operations further demonstrates our commitment to the European RF engineering community.”

Multiple product families will be developed at the new facility, including digital step attenuators, Phase-Locked Loop frequency synthesizers, and RF switches, which provide excellent RF performance. Additionally, Peregrine Semiconductor is looking for talented employees to join its European team as part of its 2012 expansion plan, which includes a substantial increase in its worldwide workforce, thus far. 

About UltraCMOS® Technology

UltraCMOS process technology is a patented advancement of Silicon-on-Insulator technology on a sapphire substrate that provides high yields, competitive costs, and an environmentally-friendly alternative to GaAs-based technologies.  UltraCMOS technology delivers significant performance advantages over competing processes such as GaAs, SiGe, BiCMOS, and bulk-silicon CMOS in applications where RF performance, low power, and high levels of integration are paramount. These measurable power and size savings offer advantages for both manufacturers and consumers, including lower power consumption, enabling longer battery life, and smaller batteries.  Additionally, Peregrine Semiconductor’s HaRP™ technology enhancements and DuNE™ antenna -tuning technology further exploit the benefits of Silicon-on-Sapphire technology, enabling dramatic improvements in harmonic results, linearity, power handling, and overall RF performance.

About Peregrine Semiconductor

ntegrated circuits (RFICs). Our solutions leverage our proprietary UltraCMOS® technology, which enables the design, manufacture, and integration of multiple RF, mixed-signal, and digital functions on a single chip. Our products deliver what we believe is an industry-leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. UltraCMOS technology combines the ability to achieve the high levels of performance of traditional specialty processes, with the fundamental benefits of standard CMOS, the   most widely-used semiconductor process technology. UltraCMOS technology utilizes a synthetic sapphire substrate, a near-perfect electrical insulator, providing low parasitic capacitance, and enabling high signal isolation, and excellent broadband linearity. These attributes result in RF devices with excellent high- frequency performance and power-handling performance, reduced crosstalk between frequencies, and enhanced network efficiency. We have engineered design advancements, including our patented HaRP™ technology which significantly improves harmonic and linearity performance; and our patent-pending DuNE™ technology, a circuit design technique that we have used to develop our advanced Digitally Tunable Capacitor (DTC) products. We offer a broad portfolio of high-performance RFICs including switches, digital attenuators, mixers/upconverters, prescalers, frequency synthesizers, DTCs, and DC-to-DC converter products; and we are currently developing Power Amplifiers (PAs). Our products are sold worldwide through our direct sales and field applications engineering staff, and our network of independent sales representatives, and distribution partners. Additional information is available on the Company’s website at https://psemi.com.

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The Peregrine Semiconductor name, logo and UltraCMOS are registered trademarks, and DuNE and HaRP are trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks are the property of their respective owners.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Power Management

    Capacitive switching technologies
    Low input/output ripple
    Low EMI performance
    High reliablity

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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