Peregrine Semiconductor’s RF Switches Reach Market Acceptance in the Cable Industry

Peregrine’s RF Switches Offer an Easy Transition from DOCSIS® 3.0 to 3.1 Technology with a Dual-Band Architecture

SAN DIEGO – March 15, 2016 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces its high linearity RF switches are designed into multiple DOCSIS 3.1 certified cable modems. CableLabs, the research and development consortium that develops the DOCSIS specification, has certified the first DOCSIS 3.1 cable modems. Of the certified modems, Peregrine Semiconductor’s RF switches—the UltraCMOS® PE42722 and PE42723—are designed into the cable modems that feature a band-select feature. The PE42722 and PE42723 are the only RF switches that enable dual upstream/downstream bands to reside in the same consumer premise equipment (CPE) device.

Before Peregrine began offering the PE42722 and PE42723, CPE devices—such as set-top boxes, cable modems and home gateways—could only support one upstream and downstream band. Extremely high linearity is required to enable and support a dual-band architecture. Peregrine offers the only RF switches with the needed high linearity to meet the standard. By enabling a dual-band architecture, CPEs can comply with the DOCSIS 3.1 cable industry standard, and multi-service operators (MSOs) have the flexibility to offer their customers new and expanded services. MSOs also benefit from the switches supporting both DOCSIS 3.0 and 3.1 technologies, allowing for a simple and cost-effective transition to DOCSIS 3.1 service.

“As the world-wide cable industry transitions from DOCSIS 3.0 to 3.1 technologies, MSOs need to future proof their CPE devices with higher flexibility in addition to backward compatibility,” says Duncan Pilgrim, vice president and general manager of Peregrine Semiconductor’s high performance analog (HPA) business unit. “Peregrine’s high linearity RF switches rise to the challenge and deliver a key selling feature for cable modem vendors. By offering a dual-band architecture, our switches enable a simple transition from DOCSIS 3.0 to 3.1 service.”

ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine products are the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 200 filed and pending patents and has shipped over 2.5 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
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    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
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    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
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    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
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    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
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    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
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    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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