pSemi Announces World’s Highest Linearity UltraCMOS+™ SP4T RF Switch

New PE42448 SP4T RF switch delivers exceptional linearity, insertion loss, and power handling

SAN DIEGO – June 16, 2025 – pSemi® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, today announced the introduction of PE42448: a high-linearity SP4T RF switch manufactured on pSemi’s UltraCMOS+ advanced silicon-on-insulator (SOI) technology.

The PE42448 switch, covering 10 MHz to 6 GHz with 52 dBm PMAX,PEAK, expands pSemi’s deep RF switch portfolio by nearly breaking the 90-dBm IIP3 barrier. Historically, the level of linearity achieved by the PE42448—the world’s highest for an RF SOI switch—has only been attainable through bulky, less reliable, and more costly solutions.

The SP4T is one of several first-generation switches to use pSemi’s newly announced UltraCMOS+ RF platform, providing a monolithic and simple solution to complex switch architectures and system lineups.  This device also offers seamless integration with pin-for-pin compatibility with the recently announced PE42443 and PE42444.

The PE42448 also offers ease-of-use features through one logic control for two pairs of PE42448s and a simple power-up and power-down sequence. These features make this device ideal for massive multiple- input, multiple-output (MIMO), test and measurement (T&M), land mobile radio (LMR), and general-purpose applications.

“We are proud to expand our industry-leading, high-linearity, high-power RF switch offerings with the introduction of the PE42448. The linearity of this switch empowers our alpha customers to drastically reduce total solution size, accelerate design cycles, and significantly reduce BOM cost and component count. I look forward to seeing how the PE42448 will be used to change system architectures in the various industry applications we support.”
Rodd Novak
Vice president of global sales, marketing, and system engineering, pSemi

By delivering superior linearity, low insertion loss, and power handling capabilities in a cost-effective, reliable, and compact form factor, the PE42448 is set to change RF system architectures, enabling a new generation of efficient designs for high-performance wireless solutions.

pSemi will showcase PE42448 at the 2025 International Microwave Symposium (IMS), to be held June 15–20, 2025, in San Francisco. Please stop by booth #443 to see a live demonstration. PE42448 samples are available now with commercial availability in July 2025. For more information, please visit the PE42448 product page. To request a sample, please contact sales@psemi.com.

About pSemi

pSemi (formerly Peregrine Semiconductor) is a leader in the design and development of semiconductor integration, providing world-class capabilities with high-performance RF, analog and mixed signal solutions. With a 30-year legacy of technology advancements, strong IP portfolio and deep expertise in RF integration, our solution portfolio spans power management, connected sensors, antenna tuning, and RF frontends, which enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices, healthcare and more. A wholly owned subsidiary of Murata Electronics North America, Inc., pSemi is headquartered in San Diego, with additional offices spanning North America, Europe, and Asia. For more information, please visit www.psemi.com and connect with us on LinkedIn at https://www.linkedin.com/company/psemi/.

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Power Management

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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