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pSemi Launches UltraCMOS+™ Showcasing 16 Generations of Platform Advancements

New technology delivers orders-of-magnitude improvements in RF and mixed-signal performance

SAN DIEGO – June 11, 2025 – pSemi® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, today unveiled its latest breakthrough in RF silicon-on-insulator (SOI) platform technology: UltraCMOS+™. Advancing the performance of legacy and patented UltraCMOS® technology, UltraCMOS+ enables pSemi to offer the next generation of monolithic integration with vast improvements in power handling, linearity, isolation, RON, COFF, integrated intelligence, and ultimately portfolio expansion.
 
As the single source of advanced silicon-on-sapphire (SOS), pSemi has developed a unique team of process engineers, IC designers, and software engineers to advance the technology. The result is the development of the UltraCMOS RF SOI platform, which includes proprietary semiconductor processes, product development kits (PDKs), simulation software, and unique circuit techniques.
 

Over the last decade, pSemi transitioned its focus from SOS to SOI but maintained its unique team and continued the advancement of UltraCMOS. The pSemi team and company culture enabled the rapid development of 16 generations of UltraCMOS, expanding the usage model while also optimizing performance for targeted RF functions.

“The introduction of the UltraCMOS+ platform represents a decade of advancements that were delivered to our internal parent company Murata. Launching this next-generation platform to our historical markets will once again change the way our customers design and architect their RF products.”
Rodd Novak
Vice president of global sales, marketing, and system engineering, pSemi

pSemi will release its first broad-market products based on the UltraCMOS+ platform at the 2025 International Microwave Symposium (IMS), to be held June 15–20, 2025, in San Francisco. Please stop by booth #443 to see live demonstrations and learn more about our groundbreaking RF solutions. For more information, please visit www.psemi.com.

About pSemi

pSemi (formerly Peregrine Semiconductor) is a leader in the design and development of semiconductor integration, providing world-class capabilities with high-performance RF, analog and mixed signal solutions. With a 30-year legacy of technology advancements, strong IP portfolio and deep expertise in RF integration, our solution portfolio spans power management, connected sensors, antenna tuning, and RF frontends, which enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices, healthcare and more. A wholly owned subsidiary of Murata Electronics North America, Inc., pSemi is headquartered in San Diego, with additional offices spanning North America, Europe, and Asia. For more information, please visit www.psemi.com and connect with us on LinkedIn at https://www.linkedin.com/company/psemi/.

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  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations
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Power Management

  • 5G antenna-integrated module (AiM) co-designed with Murata
  • High-efficiency 26 GHz, 28 GHz and 39 GHz beamforming front ends supporting bands n257, n258, n261 and n260
  • Advanced, highly integrated package and antenna technology
  • Modular AiM approach for building scalable antenna arrays
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Markets

  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability

  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability

  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability

  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability

  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability

  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)

  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability

  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return

  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability

  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability

  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

  • Unique, patented architecture to enable higher overall system, power conversion efficiency
  • Fully integrated solutions from 15W to 160W
  • Virtually lossless (up to 99% peak) conversion and soft-switching topology
  • Parallel operation to higher power levels
  • Available through our parent company Murata
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Integrated products

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RF Mixers & Limiters

  • Exceptional performance with high-frequency support
  • Highly integrated, reliable solutions in a small form factor
  • Variety of packaging options for maximum design flexibility
  • Best-in-class ESD and reliability
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Front End Modules

  • Industry-leading monolithic Wi-Fi RF front-end solutions
  • High linearity performance for Wi-Fi 6 and W-Fi 6E
  • Compact form factors integrating high-performance RF, analog and digital
  • Best-in-class ESD and reliability
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RF Phase & Amplitude Control

  • Reliable phase and amplitude control for next-generation communications
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Digital control interface with parallel and serial programming options
  • Best-in-class ESD and reliability
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RF Attenuators

  • High linearity, fast switching time with wide bandwidth
  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability
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RF Switches

  • Industry-leading RF performance
  • HaRP™ technology enhancement
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Best-in-class ESD and reliability
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