pSemi Announces Leadership Transition and Organizational Restructuring to Support Strategic Growth

Tatsuo Bizen to retire and Go Maruyama to assume role as pSemi CEO, among other leadership changes
 
SAN DIEGO – July 1, 2025 – pSemi® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, today announced significant leadership changes and organizational restructuring to support the company’s evolving business strategy and future growth.

After a distinguished 40-year career, Tatsuo Bizen will retire as CEO of pSemi and vice president of Murata Manufacturing Company, Ltd.’s (MMC) power modules division on June 30, 2025. Bizen will continue to contribute to the company in a corporate advisor role at MMC.

Since joining Murata in 1985 as an RF engineer, Bizen has held numerous leadership positions across Murata’s global operations, including product management in Europe, head of corporate global marketing, and in CEO roles at acquired companies SyChip, Murata Power Solutions, and pSemi. His leadership has played a crucial role in stabilizing and strengthening businesses across multiple regions and product areas throughout his career. pSemi extends its deepest appreciation to Bizen for his decades of service and lasting impact.

Effective July 1, 2025, Go Maruyama will assume the role as CEO of pSemi. Go brings nearly three decades of experience within Murata and its subsidiaries. He began his career in corporate planning and has held positions in marketing, business development, and product management in both Japan and China. Since joining pSemi in 2017, he has brought a unique blend of experience and played a key role in corporate strategy and post-merger integration. In his new role, Go will lead pSemi into its next phase of innovation and collaboration with Murata and its affiliates.

“It is an honor to lead pSemi into its next chapter. We have an incredible team, and a strong foundation built on decades of innovation and partnership. My focus will be on fostering a culture of collaboration between Murata and pSemi, increasing our agility, and striving for continuous growth as we expand our impact in the semiconductor industry.”
Go Maruyama
CEO

To support pSemi’s evolving business strategy, the Company also announced several key leadership promotions:

  • Keith Bargroff has been promoted to senior vice president, engineering and technology.
  • Joel Keller has been promoted to senior vice president, administration.
  • Taro Desaki has been promoted to vice president, corporate planning and business operations.

These promotions align with pSemi’s commitment to strengthen administrative functions, accelerate research and development, and enhance RFFE (radio frequency front end) and Power Management IC technology competitiveness through closer collaboration with Murata companies and other affiliates, including Eta Wireless.  

For more information about pSemi, please visit www.psemi.com. For more information about Murata Manufacturing Co, Ltd., please visit www.murata.com.

About pSemi

pSemi (formerly Peregrine Semiconductor) is a leader in the design and development of semiconductor integration, providing world-class capabilities with high-performance RF, analog and mixed signal solutions. With a 30-year legacy of technology advancements, strong IP portfolio and deep expertise in RF integration, our solution portfolio spans power management, connected sensors, antenna tuning, and RF frontends, which enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices, healthcare and more. A wholly owned subsidiary of Murata Electronics North America, Inc., pSemi is headquartered in San Diego, with additional offices spanning North America, Europe, and Asia. For more information, please visit www.psemi.com and connect with us on LinkedIn at https://www.linkedin.com/company/psemi/.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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