Peregrine Semiconductor’s New STeP5 UltraCMOS™ Process Technology Drives Record Demand

Peregrine Semiconductor’s New STeP5 UltraCMOS™ Process Technology Drives Record Demand Company ships its billionth unit and is designed into the world’s most popular smartphones

San Diego, California, February 13, 2012 – Peregrine Semiconductor Corporation (Peregrine),a fabless provider of high- performance radio-frequency (RF) integrated circuits (ICs), today announced that it has shipped its billionth CMOS-on-sapphire RFIC and has been designed into the world’s most sought-after smartphones. The milestone was achieved with a new SP8T RF Switch, one of several new high-throw-count switches designed on the latest UltraCMOS™ process technology version, STeP5, which is utilized for many of the Company’s latest RFICs, including the newest SP8T and SP10T RF Switches and the most recent DuNE™ digitally tunable capacitors (DTCs) for RF impedance tuning. The technology innovation associated with the STeP5 release has driven demand from cellular handset manufacturers and global customers for UltraCMOS RFIC products to a record number of devices per week.

“UltraCMOS STeP5 process brings an unprecedented capability to our product design team,” stated Rodd Novak, chief marketing officer for Peregrine Semiconductor. “It has enabled us to develop unique RF switches that achieve industry leading results for combined linearity, insertion loss, isolation and power consumption, all monolithically integrated into the industry’s smallest footprint. STeP5 has also opened the door for future product categories for the RF Front-End,” he added. “And with the support of our robust supply chain and manufacturing foundries, we have achieved the fastest production ramp in Peregrine history.”

The 4G/LTE network has introduced significant challenges to the RF Front-End (RFFE) of the cellular handset, including a fragmented RF spectrum, which causes co-existence issues between bands and other standards such as connectivity (GPS, Wi-Fi and Bluetooth). Lack of global frequency alignment has resulted in 28 LTE bands being identified in the 3rd Generation Partnership Project (3GPP) mobile standards specification (3GPP TS 36.101 V10).  

“One of the most difficult problems 4G and LTE handset designers face is the coexistence of multiple bands and the linearity needed to support operation without self-jamming,” commented Allen Nogee, research director with In-Stat covering the Wireless market segment. “The RF Front-End is bearing most of the design burden for performance of the RF signal. In fact, LTE’s spectral efficiency comes at the cost of increased linearity and power consumption.

Peregrine’s new STeP5 UltraCMOS products appear to have hit the need right on the mark,” he added.

Peregrine’s latest family of high-throw-count RF Switches includes the PE426151, PE426152 and PE426153 SP10T devices, and the PE426821 and PE426851 SP8T devices with integrated MIPI, SPI or GPIO interface options.

These new devices support 4G LTE RFFE linearity and insertion loss demands over all conditions:

  • PE426821 and PE426851 SP8T RF switches. Insertion loss (0.35 dB at 900 MHz and 0.45 dB at 1900 MHz); linearity (2fo,3fo is -42 dBm at 824 MHz to 2.6 GHz); IMD2/3 of -111 dBm; isolation 37 dB on all paths (900/1900 MHz); and 4kV HBM ESD (ANT) and 2kV (all pins). Operating to 3 GHz and offered in flip-chip known good die (KGD).
  • PE426151, PE426152 and PE426153 SP10T RF switches. Insertion loss (0.4 dB at 900 MHz and 0.5 dB at 1900 MHz); linearity (2fo,3fo is -42 dBm at 824 MHz to 2.6 GHz); IMD2/3 of -111 dBm; isolation 38 dB on all paths (900/1900 MHz); and 4kV HBM ESD (ANT) and 2kV (all pins). Operating to 3 GHz and offered in flip- chip known good die (KGD).

The new STeP5 RF Switches are now in high-volume production and samples are available to qualified customers. Volume pricing is available by contacting Peregrine directly or through its regional sales offices.

About Peregrine Semiconductor

Peregrine Semiconductor is a fabless provider of high-performance radio frequency integrated circuits, or RFICs. The Companys solutions leverage proprietary UltraCMOS technology, which enables the design, manufacture, and integration of multiple RF, mixed-signal, and digital functions on a single chip. The Companys products deliver what we believe is an industry leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. UltraCMOS technology combines the ability to achieve the high levels of performance of traditional specialty processes, with the fundamental benefits of standard CMOS, the most widely used semiconductor process technology. UltraCMOS technology utilizes a synthetic sapphire substrate, a near-perfect electrical insulator, providing low parasitic capacitance and enabling high signal isolation and excellent broadband linearity. These attributes result in RF devices with excellent high-frequency performance and power handling performance, reduced crosstalk between frequencies, and enhanced network efficiency. Peregrine Semiconductor has engineered design advancements, including the patented HaRP technology which significantly improves harmonic and linearity performance, and the patent-  pending DuNE technology, a circuit design technique used to develop advanced digitally tunable capacitor (DTC) products. The Company offers a broad portfolio of high-performance RFICs including switches, digitally tunable capacitors (DTCs), digital attenuators, frequency synthesizers, mixers and prescalers, and is developing power amplifiers (PAs) and DC-DC converters. Peregrine products are sold worldwide through direct sales and field applications engineering staff and a network of independent sales representatives and distribution partners. Additional information is available on the Companys website at www.psemi.com.

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The Peregrine Semiconductor name, logo and UltraCMOS are registered trademarks and HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Power Management

    Capacitive switching technologies
    Low input/output ripple
    Low EMI performance
    High reliablity

Power Management

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Front End Modules

RF Phase & Amplitude Control

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