Murata Completes Acquisition of Peregrine Semiconductor

Acquisition Strengthens Murata’s Position as a World Leader of RF System Solutions

KYOTO, Japan and SAN DIEGO – Dec. 12, 2014 – Murata Electronics North America, Inc., a wholly owned subsidiary of Murata Manufacturing Co., Ltd., (TSE 6981) and Peregrine Semiconductor Corporation, founder of RF silicon on insulator (SOI) and pioneer of advanced RF solutions, today announce that Murata has acquired all outstanding shares of Peregrine. The cash transaction paid the holders of Peregrine common shares $12.50 per share. 

Peregrine (formerly NASDAQ: PSMI) will continue to market its high-performance, integrated RF solutions under the Peregrine brand, as a wholly owned subsidiary of Murata Electronics North America, Inc. Peregrine solutions leverage the UltraCMOS® technology platform, a patented, advanced form of silicon-on-insulator (SOI) that delivers the monolithic integration and superior performance necessary to solve the world’s toughest RF challenges. Peregrine will continue to offer its integrated RF solutions to markets such as communications (mobile, wireless infrastructure, land mobile radio, broadband and wireless), industrial (test and measurement, automotive, Internet of Things) and aerospace. With the close of this acquisition, Murata gains Peregrine’s strong intellectual property portfolio, which contains over 180 filed and pending patents. 

“Today, we deepen our existing partnership and officially welcome Peregrine Semiconductor to the Murata family,” says Norio Nakajima, Executive Vice President, Director of Communication Business Unit of Murata. “With this acquisition, we combine Murata’s world-leading mobile RF module capabilities with Peregrine’s best-in-class RF products. We’re eager to leverage Peregrine’s innovations, such as the industry’s first reconfigurable RF front-end system UltraCMOS Global 1, and expand the Murata business into all the markets that Peregrine currently offers RF solutions. This acquisition further defines our stance as an ‘Innovator in Electronics’.” 

“After years of a successful partnership, we’re happy to become a part of the Murata team, the world’s leading RF module and filter provider,” says Jim Cable, PhD, President and CEO of Peregrine Semiconductor. “Murata already has deep relationships and trust built in all of our target markets. We believe we can offer their customer base exciting new RF capabilities. With the reach of Murata products and the power of our UltraCMOS technology, we believe we will change the course of RF history. In the case of mobile, it will speed the industry’s transition to an integrated, all-CMOS RF front-end. Together, we’re looking forward to accomplishing great things.”

Founded in 1944 in Kyoto, Japan, Murata celebrated its 70th anniversary in October. Murata has grown into a global enterprise composed of 101 companies in 23 nations. As an “Innovator in Electronics”, Murata designs, manufactures and supplies advanced electronic materials, leading-edge electronic components and multi-functional, high-density modules. Murata innovations can be found in a wide range of applications from mobile phones to home appliances, and automotive applications to energy management systems and healthcare devices. 

About Peregrine Semiconductor 

Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit https://psemi.com.

About Murata Americas (www.murataamericas.com)

Murata Americas regional headquarters is Murata Electronics North America, Inc., a wholly owned subsidiary of Murata Manufacturing Co., Ltd., whose global headquarters are in Kyoto, Japan. Murata Americas is the organization responsible for the regional management of the Murata companies located in North and South America.  Murata Americas serve as the regional and functional headquarters supporting our customers’ engineering and procurement activities throughout the Americas.

About Murata 

Murata Manufacturing Co., Ltd. is a worldwide leader in the design, manufacture and sale of ceramic-based passive electronic components & solutions, communication modules and power supply modules. Murata is committed to the development of advanced electronic materials and leading edge, multi-functional, high-density modules. The company has employees and manufacturing facilities throughout the world. For more information, visit Murata’s website at www.murata.com.

###

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

Skip to content