Peregrine Semiconductor Ships 500 Millionth UltraCMOS™ RFIC

Technology takes position to displace GaAs-based ICs, toxic compounds

San Diego, California, September 15, 2009 Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced it has recently shipped its half- billionth UltraCMOS™ RFIC, a milestone which highlights the successful adoption and proliferation of the Company’s disruptive UltraCMOS silicon-on-sapphire technology.

Peregrine’s UltraCMOS technology is a patented variation of silicon-on-insulator (SOI) process that combines industry-standard silicon CMOS circuitry with a highly insulating sapphire substrate, delivering the industry’s highest RF performance in areas such as linearity, isolation, ESD tolerance, speed and switch settling time. More importantly, UltraCMOS-based RFICs offer an environmentally friendly option to arsenic-based GaAs ICs which have historically been widely used in RF and wireless systems. With the global move toward ‘green engineering’ and reduction of hazardous substances (RoHS), UltraCMOS SOS devices are poised to offer engineers and manufacturers alike a simple, responsible solution for the next-generation designs demanded by the environmentally conscious consumer.

For years, engineers designing for personal communications devices such as cellular phones and mobile digital assistants sought primarily to increase system performance while reducing size and power consumption. Today, however, electronics component designers must also take into account emerging standards and regulations regarding waste, hazardous substances and recycling. This is especially the case with handheld electronics, where extremely high global volumes are creating significant disposal issues in the earth’s landfills. The green technology movement has generated resolutions around the world aimed at banning or limiting hazardous substances found in consumer electronics. In particular, gallium arsenide (GaAs) has been classified in the U.S., EU and Japan as a toxic compound and dangerous for the environment.

“With current worldwide sales of approximately 1.3 billion units per year, cellular handsets have become not only technology, business and lifestyle drivers but also a leading contributor to eWaste,” stated Jim Cable, president and CEO of Peregrine Semiconductor Corp. “We believe that by providing a performance advantage with our UltraCMOS technology and by offering systems designers an alternative to arsenic-based RFICs, we are doing our part to help our customers and the environment,” he added. Peregrine, which has offices and a sales support network around the world, is also actively developing corporate programs toward the awareness of eWaste and electronics recycling.

About Environmentally-friendly UltraCMOS™ Technology

UltraCMOS™ mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. This technology delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and high levels of integration are paramount. The Company’s revolutionary HaRP™ technology further exploits the fundamental benefits of silicon-on-sapphire, enabling dramatic improvements in harmonic results, linearity and overall RF performance which today remain unmatched by any other RF process technology.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.

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The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Charge Pump Capacitor Divider

    Unique, patented architecture to enable higher overall system, power conversion efficiency
    Fully integrated solutions from 15W to 160W
    Virtually lossless (up to 99% peak) conversion and soft-switching topology
    Parallel operation to higher power levels
    Available through our parent company Murata
  • 2-Stage Buck Regulators

    Family of DC-DC buck voltage regulators ICs and modules for telecoms, datacoms, server and storage applications
    Compact solution size offering best-in-class efficiencies for low profile applications (<1.2mm)
    Fully programmable via I2C and with accurate on-board telemetry
    Available through our parent company Murata
  • 2-Stage Boost Regulators - LED Backlight Drivers

    Ultra-high efficiency (up to 96%) LED boosts for LCD displays
    Product family includes products for 1-cell, 2-cell, and 3-cell inputs such as tablets, notebooks and 2-in-1 convertibles
    Enables very low profile (<0.7 mm) solutions and halves power-conversion losses compared to leading alternatives
    Up to 15-bit resolution via I²C or PWM control
    High accuracy with tight matching at low LED current
  • Multi-level Converters

    Industry-first 4-level and 3-level conversion for fixed input voltages (USB_PD)
    Configurable as charge pump divide-by-3 and divide-by-2 for variable input voltages (USB_PPS)
    Wide range input voltage 4.5V to 18V compatible with USB and wireless charging Qi sources
    Reverse boost capability
    High-accuracy current and voltage telemetry
    Best-in-class efficiency for low-profile applications (<1 mm)
    Targets fast-charging battery applications

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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