Soitec Increased Production of Bonded SOS Wafers to Meet Peregrine Semiconductor Demand

STeP5 UltraCMOS® RFICs in high demand for 4G LTE mobile applications

San Diego, CA, USA and Bernin, France, Nov. 6, 2012 Soitec (Euronext Paris), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, today announced it has more than doubled production of bonded silicon-on-sapphire (BSOS) substrates to meet increased demand from its strategic partner, Peregrine Semiconductor Corporation (NSADAQ: PSMI). Peregrine Semiconductor, a fabless provider of high-performance radio frequency integrated circuits (RFICs), has increased peak-production capability of its latest-generation STeP5 UltraCMOS® technology-based RF switches to more than two million units a day, to support design wins in the Radio Frequency Front Ends (RFFEs) of today’s most advanced 4G smart phones, and other wireless- communication applications. These wins established Peregrine Semiconductor as the market leader for the main RF antenna switch for cellular handsets1.

Soitec’s direct wafer-bonding technologies are used to produce the BSOS substrate employed in the manufacture of Peregrine Semiconductor’s highly-tuned semiconductor wafers. The combination of Soitec’s innovative substrate, and Peregrine Semiconductor’s UltraCMOS process technology, and IC design expertise, enable high-performance RFICs for a variety of applications.

 “We are experiencing powerful traction in the market with the latest STeP5 UltraCMOS RF switches, and we believe these products enable the high level of RF performance that is critical for new, 4G LTE smartphones and wireless devices,” said Mark Miscione, vice president of RF Technology Solutions for Peregrine Semiconductor. “Soitec’s expertise has been important in the development of a substrate technology that offers the reliability, yield, and process scalability of equivalent bulk CMOS technologies. We are pleased with the continued commitment and support we receive.”

 “As a result of supporting Peregrine Semiconductor’s continued strong growth, we have reached a new level in high-volume manufacturing for our bonded-SOS product,” said Bernard Aspar, vice president of Soitec’s Layer Transfer Solutions Business Unit. “Bonded SOS is part of our strategy to deliver leading-edge engineered substrates for mobile electronic-device markets.”

About Peregrine Semiconductor

Peregrine Semiconductor (NASDAQ: PSMI) is a fabless provider of high-performance radio frequency integrated circuits (RFICs). Our solutions leverage our proprietary UltraCMOS® technology, an advanced RF Silicon-On-Insulator process. Our products deliver what we believe is an industry- leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. Additional information is available on the Company’s website at https://psemi.com.

About Soitec

Soitec is an international manufacturing company, a world leader in generating and manufacturing revolutionary semiconductor materials at the frontier of the most exciting energy and electronic challenges. Soitec’s products include substrates for microelectronics (most notably SOI: Silicon-on-Insulator) and concentrator photovoltaic systems (CPV). The company’s core technologies are Smart Cut™, Smart Stacking™ and Concentrix™, as well as expertise in epitaxy. Applications include consumer and mobile electronics, microelectronics-driven IT, telecommunications, automotive electronics, lighting products and solar power plants for large-scale utilities. Soitec has manufacturing plants and R&D centers in France, Singapore, Germany, and the United States. For more information, visit http://www.soitec.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. Soitec, Smart Cut, Smart Stacking and UNIBOND are trademarks of S.O.I.TEC Silicon On Insulator Technologies. All other trademarks are the property of their respective owners.

 

1 Andoh, Yoshiyasu (Navian Inc). RF Devices/Modules For Cellular Terminal Quarterly Market Report CY2012 2Q, Oct. 5, 2012: page 153.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Charge Pump Capacitor Divider

    Unique, patented architecture to enable higher overall system, power conversion efficiency
    Fully integrated solutions from 15W to 160W
    Virtually lossless (up to 99% peak) conversion and soft-switching topology
    Parallel operation to higher power levels
    Available through our parent company Murata
  • 2-Stage Buck Regulators

    Family of DC-DC buck voltage regulators ICs and modules for telecoms, datacoms, server and storage applications
    Compact solution size offering best-in-class efficiencies for low profile applications (<1.2mm)
    Fully programmable via I2C and with accurate on-board telemetry
    Available through our parent company Murata
  • 2-Stage Boost Regulators - LED Backlight Drivers

    Ultra-high efficiency (up to 96%) LED boosts for LCD displays
    Product family includes products for 1-cell, 2-cell, and 3-cell inputs such as tablets, notebooks and 2-in-1 convertibles
    Enables very low profile (<0.7 mm) solutions and halves power-conversion losses compared to leading alternatives
    Up to 15-bit resolution via I²C or PWM control
    High accuracy with tight matching at low LED current
  • Multi-level Converters

    Industry-first 4-level and 3-level conversion for fixed input voltages (USB_PD)
    Configurable as charge pump divide-by-3 and divide-by-2 for variable input voltages (USB_PPS)
    Wide range input voltage 4.5V to 18V compatible with USB and wireless charging Qi sources
    Reverse boost capability
    High-accuracy current and voltage telemetry
    Best-in-class efficiency for low-profile applications (<1 mm)
    Targets fast-charging battery applications

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