IEEE MTT-S Names Rui Ma Distinguished Microwave Lecturer

pSemi congratulates Dr. Rui Ma, our Director of mmWave PA Systems, on being named an IEEE Microwave Theory and Technology Society (MTT-S) Distinguished Microwave Lecturer (DML) for the Class of 2023–2025. 

IEEE is the world’s largest professional association dedicated to advancing technological innovation and excellence for the benefit of humanity. MTT Society is a transnational society that promotes the advancement of microwave theory and its applications, including RF, microwave, millimeter-wave and terahertz technologies. Each year, MTT-S carefully selects a group of DMLs who are internationally recognized experts and technical leaders in their fields within the Society. The DMLs give talks to local chapters around the world and serve as ambassadors for the Society.  

In this role, Dr. Ma will present Digitization and Intelligence: Unlocking the Innovation of Future Radios, a talk that will introduce innovations in advanced RF transmitters. From 2012 until joining pSemi in July 2022, Dr. Ma was a Senior Principal Scientist of RF Research with Mitsubishi Electric Research Laboratories in Cambridge, Massachusetts, where he received a MIPI Alliance award for his contributions to the development of the analog reference interface for the eTrak envelope tracking specification and top corporate R&D awards for GaN development and its RF applications. During this time, he was also a Visiting Scientist with THz Integrated Electronics Group at the Massachusetts Institute of Technology (MIT) from 2016 to 2021. 

From 2010 to 2012, Dr. Ma was a Senior Research Engineer with Nokia Siemens Networks (NSN), where he focused on research and development for enabling power amplifier technologies for wideband radio at NSN Research Center.  

Dr. Ma is a Senior Member of IEEE and inventor or co-inventor of more than 25 U.S. patents and patent applications on RF-related topics. He has served on the MTT-S AdCom Committee and IMS2019/21 Steering Committee. From 2018 to 2020, Dr. Ma chaired the MTT Boston chapter and won the 2020 MTT-S Outstanding Chapter Award. He is also an Associate Editor of both IEEE Transactions on Microwave Theory and Techniques and IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology. 

Dr. Ma received his Ph.D. in Electrical Engineering from the University of Kassel, Kassel, Germany, in 2009.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
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  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
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    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
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  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
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  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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