pSemi Announces New Leadership Structure

In addition to a new CEO, company promotes Go Maruyama to senior vice president of administration and two directors to vice presidents

SAN DIEGO – July 1, 2019 – pSemi Corporation (formerly Peregrine Semiconductor), a Murata company focused on semiconductor integration, today announced a new leadership structure.  As reported in February, Sumit Tomar will officially assume the role of CEO July 1. In addition, Go Maruyama will be promoted to senior vice president of administration and two directors will transition into vice president positions.

Tomar has a proven track record of managing Profit and Loss, design win strategy and revenue growth for Wireless Infrastructure, WLAN, Industrial and Automotive markets.  He has driven strategic direction for numerous market-shaping products, including RF transceivers, RF synthesizers, Power Amplifiers and RF Multi-Chip modules. Prior to joining pSemi, Tomar co-founded C-Ran Inc., where he designed and licensed a 5G RF system-solution prototype that solved issues of indoor coverage in 5G deployments. Tomar has held high-level management positions at several prominent technology companies, including the role of general manager at Qorvo, product line manager for High Speed Signal Path Solutions at Texas Instruments and product line manager at Skyworks Solutions Inc. Tomar received a Master of Science in electrical engineering from Indian Institute of Technology (IIT), Roorkee and completed the Executive Management Program at Stanford University.

“Throughout Sumit’s 20-plus year career, he has seamlessly brought numerous RF products to market, making him well-equipped to drive pSemi’s growth trajectory,” says Jim Cable, chairman of pSemi. “We recently celebrated the shipment of our 5 billionth chip – a huge accomplishment for the entire pSemi team. I am highly confident Sumit will be able to maintain this momentum in his new leadership role.”

Under the new structure, Go Maruyama will serve as senior vice president of administration. Maruyama will have six direct reports, including vice president of legal, intellectual property (IP) and licensing, sales and business development, information technology (IT), and corporate planning and development. Maruyama brings a unique blend of experience to pSemi, boasting a 20-year tenure with Murata and its subsidiaries. As the current vice president of corporate planning, Maruyama is responsible for managing pSemi’s corporate strategy, promoting post-merger integration of merger and acquisition activities and acting as a liaison between Murata’s local and overseas affiliates. From 2013 to 2017, Maruyama served as a General Manager of marketing and business development for Murata Investment Co. in Shanghai where he was responsible for creating new business in emerging markets, especially focusing on automotive, health care and energy. Other previous positions at Murata Manufacturing Co. include manager of corporate planning. Maruyama earned his MBA and master’s degree in information technology from the Katz Graduate School of Business at the University of Pittsburgh and his bachelor’s degree in economics from Keio University in Tokyo.

“Go offers deep experience leading teams at both with pSemi and Murata, and our working relationship has been more than stellar,” continues Jim Cable. “The company has greatly benefitted from Go’s leadership and collaboration skills, which is why I am thrilled he will be transitioning into a more expanded role.”

The restructuring also includes the promotion of Mark Moffat to vice president of Power and Rodd Novak to vice president of corporate planning and development. Moffat joined pSemi in 2012 as the U.K. office’s director of power management, overseeing integrated circuit (IC) innovation, product design and strategic marketing for the power division. Novak returned to pSemi in 2017 as a managing consultant to oversee corporate planning. Both positions will report directly to the senior vice president of administration.

About pSemi

pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission: to enhance Murata’s world-class capabilities with high-performance RF, analog and mixed-signal solutions. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare. From headquarters in San Diego and offices around the world, pSemi’s team explores new ways to make electronics for the connected world smaller, thinner, faster and better. To view pSemi’s semiconductor advancements or to join the pSemi team, visit www.psemi.com.

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The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries. All other trademarks are the property of their respective companies. The pSemi website is copyrighted by pSemi Corporation. All rights reserved.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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