Peregrine Semiconductor Ships Industry’s First True DC Switch

The UltraCMOS® PE42020 Integrates RF, Digital and Analog Functions in a Monolithic Die to Preserve Signal Integrity From DC to 8 GHz

SAN DIEGO – Jan. 14, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the availability of the UltraCMOS® PE42020, the industry’s first and only RF integrated switch to operate at true DC, zero Hz. This True DC RF switch features high power handling and maintains excellent RF performance and linearity from DC through 8000 MHz. A reliable alternative to problematic mechanical relays and micro-electro-mechanical systems (MEMS), the PE42020 is ideal for test-and-measurement (T&M) and automated-test-equipment (ATE) applications.

Peregrine’s new UltraCMOS® True DC RF switch, PE42020, is the industry’s first and only RF integrated switch to operate from DC to 8 GHz.

“For the first time, an integrated RF switch can operate at DC and truly cover the signal over the entire frequency spectrum,” says Kinana Hussain, Peregrine’s senior manager of marketing. “Until now, only mechanical relays and MEMS switches allowed DC pass through, and these products are plagued with reliability issues and lack of integration. Today’s release of the UltraCMOS PE42020 is another example of Peregrine solving the RF industry’s biggest challenges.”

Peregrine’s UltraCMOS technology enables intelligent integration, a capability of integrating RF, digital and analog functions onto a monolithic die. The True DC RF switch integrates high performance RF switching, analog DC tracking and digital control logic and impedance control on a single chip. By integrating these functions, RF engineers gain many benefits, including greater system capability, improved performance, a smaller form factor, reliability and flexibility.

Features, Packaging, Pricing and Availability
Peregrine’s PE42020 is a single-pole double throw (SPDT) True DC RF switch that supports a wide frequency range from DC (zero Hz) through 8000 MHz. A configurable 50-ohm absorptive or open reflective switch, PE42020 exhibits high power handling of 30 dBm at 0 Hz and 36 dBm at 8 GHz. It also has a high linearity of 62 dBm IIP3, excellent total harmonic distortion (THD) of -84 dBc and a high power 0.1dB compression point of 38 dBm at 8 GHz. The PE42020 features a fast switching time of 10 microseconds, a fast settling time of 35 microseconds and a high ESD rating of 1000V HBM on all pins. In addition, it can handle DC or AC peak voltages in the range of +10V to -10V on the RF ports and DC current through RF active ports of up to 80 mA, representing a first for this type of switch. Samples, evaluation kits and volume-production parts are available now. Offered in a RoHS compliant, 20-lead 4 x 4 mm QFN, the PE42020 is $14 each for 1K-quantity orders and $11.35 each for 5K-quantity orders.

ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.

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    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
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    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
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    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Best-in-class ESD and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
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    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
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