High-speed FET Driver

High-speed FET Driver

PE29101

OBSOLETE (OBS)
This product is obsolete. For more information, please contact your local sales representative.

The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

Technical Resources

You can view technical documents about Power Semiconductor.
Click the download button to view or download the file.
*The information in the datasheets may be modified without notice or may become unavailable.

Datasheet: This provides the features, specifications, and measurement directions.

Evaluation Kit (EVK) User’s Manual: This provides how to use the evaluation board.

Specifications

Key Features

      High- and low-side FET drivers
      Dead-time control
      Fast propagation delay, 11ns
      Internal gate overvoltage management
      Sub-nanosecond rise and fall time
      2A/4A peak source/sink current
      Packaging: Flip chip

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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