UltraCMOS® SP6T RF Switch

UltraCMOS® SP6T RF Switch

PE42562

The PE42562 is a HaRP™ technology-enhanced absorptive SP6T RF switch that supports a frequency range from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in order for the PE42562 to deliver spur-free performance. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports.

Specifications

DescriptionSP6T (A)
Min Freq.9 kHz
Max Freq.8 GHz
Max Typ. IL (dB)1.6
Min Typ. IL (dB)0.7
Max Typ. Iso (dB)68
Min Typ. Iso (dB)30
P1dB/P0.1dB (dBm)40.0 / 37.5
IIP3 (dBm)60
Max Power Rating (dBm)33
Max Temp (ºC)105
VDD Range (V)2.3–5.5
Switching Time0.21 µs
ESD HBM (V)1000
Package (mm)4x4
Package24L QFN

Key Features

      High isolation: 35 dB @ 6 GHz
      Low insertion loss: 1.1 dB @ 6 GHz
      Fast switching time of 210 ns
      Power handling of 33 dBm CW
      Logic select (LS) pin provides maximum control logic flexibility
      Terminated all-off state mode
      External VSS pin to eliminate spur
      Packaging: 24-lead 4 × 4 mm QFN

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RF Switches

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    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
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  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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