Craig Ensley Joins Peregrine Semiconductor as President, C.O.O.

Industry veteran to focus on operational excellence, sustained growth

San Diego, California, June 12, 2006 Peregrine Semiconductor, a supplier of the industry’s most advanced RF CMOS integrated circuits, today announced that Craig H. Ensley has joined its executive team as President and Chief Operating Officer, and has been elected to the board of directors. Ensley has 30 years of broad experience in the semiconductor and systems technology industries, spanning venture capital start-ups to multi-hundred-million dollar public corporations. Most recently Craig was with Cirrus Logic, where he led repositioning of the firm to be a highly profitable mixed-signal analog IC company. He brings to Peregrine a strong vision for disruptive semiconductor technology, a deep strategic and product planning background, extensive knowledge in executing high-growth businesses, and exceptional leadership and team-building skills which attract and motivate a talented workforce. Ensley will be responsible for leading Peregrine’s operations in order to meet the market’s explosive demand for UltraCMOS™ RFICs.

“We set out to fill a tall order: to find an individual with not only a strong background ramping a start- up IC company, but also an understanding of the complex issues associated with a billion dollar company,” said Jim Cable, C.E.O. of Peregrine Semiconductor. “Craig’s relevant mixed-signal product experience, global business relationships, and comprehensive understanding of the IC industry made him an ideal candidate. His impressive ability to establish a vision and motivate a corporation toward operational excellence made him the right choice for Peregrine. His leadership, loyalty and extraordinary sense of fundamental business operations will ensure that the foundation upon which we are building Peregrine is rock solid, and poised for the decade ahead,“ he added.

“The Peregrine opportunity is an intensely exciting and challenging one,” said Ensley. “The high-performance mixed-signal business is large and growing; our growth markets – such as mobile handsets and broadband RF – are innovative and leading-edge; and our proprietary UltraCMOS™ technology is truly revolutionary. The talent in the company is unmatched in our industry. Couple these facts with the momentum Peregrine has developed in the recent couple of years, and I’m thrilled at the opportunity to join the team,” he added.

Prior to Ensley’s position as Senior Vice President of Cirrus Logic, he was an executive in the team which started Crystal Semiconductor, a highly successful mixed-signal IC company which pioneered high performance analog IC design using industry-standard CMOS wafer processing.  At Crystal, Ensley was initially Vice President of Marketing and subsequently General Manager of several divisions.  Previously Ensley led Marketing for the semiconductor division of Rockwell International where his team started and built a dominant and enduring position as the world’s leading supplier of modem ICs. Ensley has an M.B.A. from Stanford University and B.S. degrees in both Applied Physics and Economics from the University of California at San Diego.

About UltraCMOS™ Technology

UltraCMOS™ mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. This technology delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless infrastructure and mobile wireless; broadband communications; space, defense and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. Peregrine 0.25µm and 0.5µm UltraCMOS devices are manufactured in its 6” CMOS facility located in Sydney, Australia and in Tokyo, Japan through an alliance with OKI Electric Industry Co., Ltd. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at psemi.com. Contact Peregrine’s worldwide distribution partner, Richardson Electronics (NASDAQ: RELL), for sales information at 1-800-737-6937.

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The Peregrine Semiconductor name, logo and UTSi are registered trademarks and UltraCMOS is a trademark of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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