Peregrine Semiconductor Upgrades High-Isolation, Multi-Throw Switches

The UltraCMOS® PE42442 and PE42452 Address Emerging Requirements in Wireless Infrastructure Equipment

SAN DIEGO – July 29, 2014 – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42442 and the PE42452 high-isolation, multi-throw switches. Successors to the popular PE42451, these SP4T and SP5T switches include several additional features that support the latest wireless infrastructure demands, including an extended temperature range to 105-degrees Celsius and control logic support of 1.8V and 3V. With the rapid expansion of LTE and soon LTE-A, these high-isolation switches provide a reliable solution for wireless infrastructure applications and enable LTE-infrastructure designs to maximize spectral efficiency and data throughput.

“As the demands of the wireless infrastructure market shift, Peregrine has strategically added key features that help our customers adapt to emerging trends,” says Kinana Hussain, senior marketing manager. “Peregrine is in a unique position to address many of these demands, largely due to the capabilities of our UltraCMOS technology. RF engineers can now leverage an increased temperature range, lower power consumption and more design flexibility, coupled  with key UltraCMOS advantages in reliability, linearity, ESD and consistent RF performance.”

Peregrine’s new UltraCMOS® high-isolation switches, the PE42442 and the PE42452, address emerging requirements in wireless infrastructure equipment.

Building on the foundation of the PE42451, the PE42442 and PE42452 include several new features. The temperature support was increased to 105-degrees Celsius for use in rugged conditions, a 1.8V logic control was included to enable lower power consumption and a wider power supply range of 2.3V to 5.5V was employed for maximum design flexibility. Additionally, the insertion loss, isolation and ESD protection on the switch were enhanced.

Features, Packaging, Pricing and Availability

Covering a frequency range of 450 MHz to 4 GHz, the PE42442 and PE42452 deliver exceptional isolation, linearity invariance over supply, flexible control and unparalleled ESD protection. The PE42442, a SP4T RF switch, is a four-throw version of the PE42452 and offers a 52 dB port-to-port isolation at 2.7 GHz and 61 dB at 900 MHz. The PE42452, a SP5T RF switch, is a pin-compatible upgraded version of the PE42451 and delivers 52 dB isolation at 2.7 GHz and 61 dB at 900 MHz. The 50-ohm absorptive switches have high linearity up to 4 GHz with a more than 55 dBm IIP3. These high-isolation switches deliver ESD protection of 4 kV HBM on all RF pins, enabling high manufacturing reliability.

Offered in a 24-lead, 4x4mm QFN package, samples and volume-production parts are available now. For 10K-quantity orders, the PE42442 is priced at $1.60 each and the PE42452 is $1.92 each. Evaluation kits are also available.

USE OF FORWARD-LOOKING STATEMENTS

This press release contains forward-looking statements regarding our management’s future expectations, beliefs, intentions, goals, strategies, plans and prospects. Such statements constitute “forward-looking” statements, which are subject to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. The achievement of the matters covered by such forward-looking statements involves risks, uncertainties and assumptions. If any of these

risks or uncertainties materialize, or if any of the assumptions prove incorrect, our actual results, performance or achievements could be materially different from any future results, performance or achievements expressed or implied by the forward-looking statements. Such risks and uncertainties include, but are not limited to, our dependence on a limited number of customers for a substantial portion of our revenues; intellectual property risks; intense competition in our industry; our ability to develop and introduce new and enhanced products on a timely basis and achieve market acceptance of those products; consumer acceptance of our customers’ products that incorporate our solutions; our lack of long-term supply contracts and dependence on limited sources of supply; and potential decreases in average selling prices for our products.

For further information regarding risks and uncertainties associated with Peregrine’s business, please refer to the filings that we make with the Securities and Exchange Commission from time to time, including those set forth in the section entitled “Risk Factors” in our Form 10-K for the year ended December 28, 2013, which should be read in conjunction with these financial results. These documents are available on the SEC Filings section of the Investor Relations section of our website at http://investors.psemi.com/. Please also note that forward-looking statements  represent our management’s beliefs and assumptions only as of the date of this press release.

Except as required by law, we assume no obligation to update these forward-looking statements publicly, or to update the reasons actual results could differ materially from those anticipated in the forward-looking statements, even if new information, becomes available in the future.

ABOUT PEREGRINE SEMICONDUCTOR

Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test- and-measurement equipment and wireless infrastructure. Peregrine holds more than 180 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    20W average RF input power
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    Unique, patented architecture to enable higher overall system, power conversion efficiency
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    Available through our parent company Murata
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    Product family includes products for 1-cell, 2-cell, and 3-cell inputs such as tablets, notebooks and 2-in-1 convertibles
    Enables very low profile (<0.7 mm) solutions and halves power-conversion losses compared to leading alternatives
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