Peregrine Semiconductor Introduces Next-Generation Technology Platform with Industry’s Best RonCoff Performance

The 300 mm UltraCMOS® 12 Technology Platform Boasts a 25-Percent Improvement in RONCOFF Performance

SAN DIEGO – Jan. 25, 2017 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 12 technology platform. Now in production, this next-generation RF SOI platform boasts the industry’s lowest RONCOFF performance level of 80 fs—a 25-percent improvement over the last generation. To develop the 300 mm UltraCMOS 12 platform, Peregrine collaborated with GLOBALFOUNDRIES, a leading full-service semiconductor foundry.

Peregrine Semiconductor’s next-generation platform, UltraCMOS® 12 technology, boasts the industry’s best RonCoff performance.

A key metric for RF switching, RONCOFF is Peregrine’s performance benchmark for each new generation of the UltraCMOS platform. RONCOFF is a ratio of how much loss occurs when a radio signal goes through a switch in its ON state (RON, or on-resistance) and how much the radio signal leaks through the capacitor in its OFF state (COFF, or off capacitance). With each new UltraCMOS generation, Peregrine targets a 20-percent improvement in RONCOFF. UltraCMOS 12 technology surpasses this target and sets a new industry standard for RONCOFF performance.

“For nearly three decades, Peregrine’s UltraCMOS technology platform has been at the forefront of RF SOI performance – especially for RF switching,” says Alain Duvallet, vice president of RF process technology at Peregrine Semiconductor. “This legacy continues with today’s introduction of the UltraCMOS 12 platform, which boasts the industry’s best RONCOFF performance. And this technology breakthrough is on a 300 mm RF SOI wafer!”

UltraCMOS 12 technology, like the two generations prior—UltraCMOS 10 and 11, uses a custom fabrication flow from GLOBALFOUNDRIES. This collaboration between Peregrine and GLOBALFOUNDRIES yields industry-leading advancements. UltraCMOS 11 technology, introduced in July 2015, was the industry’s first RF SOI 300 mm platform, and UltraCMOS 10, introduced in October 2013, delivered the industry’s best RONCOFF performance, at the time.

“Our joint development with Peregrine Semiconductor continues to produce remarkable results, and UltraCMOS 12 technology is the latest success story,” said Raj Nair, vice president of technology development at GLOBALFOUNDRIES. “This new RF SOI technology reaffirms our commitment to the RF market and is another example of how GLOBALFOUNDRIES can provide industry-leading levels of performance, reliability and scalability.

Pictured are wafers from Peregrine’s UltraCMOS® 11 and 12 technology platform (left), UltraCMOS 10 platform (middle) and UltraCMOS silicon on sapphire (right).

ABOUT PEREGRINE SEMICONDUCTOR

Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine’s product portfolio is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 300 issued and pending patents and has shipped over 3.5 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
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    Digital control interface with parallel and serial programming options
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    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
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    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
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    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
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    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
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    Best-in-class ESD and reliability
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    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
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    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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