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UltraCMOS+™ SPDT RF Switch

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UltraCMOS+™ SPDT RF Switch

PE42429

EAR99
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The PE42429 is a HaRP™ technology-enhanced SPDT RF switch designed for use in 4G/5G wireless infrastructure and other high-performance RF applications. It consists of two symmetric RF ports with very high isolation up to 8.5 GHz.

The PE42429 is manufactured using the pSemi UltraCMOS+™ process, a patented silicon-on-insulator (SOI) technology. pSemi’s HaRP technology enhancements deliver high isolation and excellent linearity performance.

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Industry-Leading Product

Specifications

DescriptionSPDT (R)
Min Freq.9 kHz
Max Freq.8.5 GHz
Typ. IL (dB)1.1
Typ. Iso (dB)50
Min Typ. Iso (dB)38
IIP3 (dBm)65
Max Power Rating (dBm)34
Max Temp (ºC)105
VDD Range (V)2.3–5.5
Switching Time490 ns
ESD HBM (V)2000
Package (mm)2x2
Package12L QFN
ECCNEAR99

Lifecycle: In Production

About Product

Key Features

      Operating frequency: 9 kHz to 8.5 GHz
      High isolation: 46 dB @ 6 GHz
      Low insertion loss: 0.8 dB @ 6 GHz
      High linearity: 65 dBm IIP3
      Fast switching time: 490 ns
      Operating temperature range: -40 to +105 °C
      Packaging: 12-lead 2.0 × 2.0 mm QFN

Products displayed on this site are protected under one or more of the following U.S. Patents.

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Product Lifecycle Stages

Pre Release

This product is in early production and may still be undergoing engineering validation; availability is limited and subject to change.

In Production

This product has completed validation and is recommended for new and existing designs.

Not Recommended for New Design (NRND) 

This product is in production but is not recommended for new designs.

Last Time Buy

This product is being phased out and will soon be obsolete; please contact sales for final availability and replacement options.

Obsolete

This product is no longer offered. Please contact sales for replacement options.

Markets

  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations
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Power Management

  • 5G antenna-integrated module (AiM) co-designed with Murata
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Markets

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  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations

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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    Wideband support with a frequency range from 0 Hz to 67 GHz
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability

  • High Power Switches

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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Extended Temperature RF Switches

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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    20W average RF input power
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Power Management

  • Unique, patented architecture to enable higher overall system, power conversion efficiency
  • Fully integrated solutions from 15W to 160W
  • Virtually lossless (up to 99% peak) conversion and soft-switching topology
  • Parallel operation to higher power levels
  • Available through our parent company Murata
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Integrated products

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  • Highly integrated, reliable solutions in a small form factor
  • Variety of packaging options for maximum design flexibility
  • Best-in-class ESD and reliability
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Front End Modules

  • Industry-leading monolithic Wi-Fi RF front-end solutions
  • High linearity performance for Wi-Fi 6 and W-Fi 6E
  • Compact form factors integrating high-performance RF, analog and digital
  • Best-in-class ESD and reliability
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RF Phase & Amplitude Control

  • Reliable phase and amplitude control for next-generation communications
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Digital control interface with parallel and serial programming options
  • Best-in-class ESD and reliability
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RF Attenuators

  • High linearity, fast switching time with wide bandwidth
  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability
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RF Switches

  • Industry-leading RF performance
  • HaRP™ technology enhancement
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Best-in-class ESD and reliability
View Products
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