PE566212 and PE566213 combine high-performance transmit and receive paths within an industry leading compact monolithic SOI solution, extending signal range for Bluetooth®, Zigbee®, and Thread designs.
SAN DIEGO – October 9, 2026 – pSemi® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, today announced the PE566212 and PE566213, two fully monolithic 2.4 GHz silicon-on-insulator (SOI) front-end modules (FEMs) for Bluetooth®, Zigbee®, and Thread IoT applications. Building on pSemi’s long history of developing highly integrated RF front-end solutions for the handset market, the new FEMs bring that integration expertise to smart-home, wireless-audio, wearable, sensing, and other connected-device applications. Each device integrates a power amplifier, low-noise amplifier, and RF switch in an ultra-compact package to improve transmit and receive performance while simplifying RF design.
Both FEMs deliver power-efficient transmit output up to +20 dBm, a receive noise figure of 1.8 dB at 13 dB of gain, and typical bypass-path loss of 0.8 dB in a 14-lead 1.8 mm × 1.8 mm × 0.63 mm LGA package. The devices provide up to 5 to 10 times greater range compared with a standalone SoC. Leveraging pSemi’s patented UltraCMOS+™ process and decades of RF integration experience, the PE566212 and PE566213 extend the company’s proven FEM technology into a new class of connected-device applications, providing a highly integrated, reliable silicon-based alternative to traditional GaAs and SiGe front ends.
Key product benefits for the PE566212 and PE566213 include:
- Integrated system solution: A fully monolithic PA, LNA, and RF switch, GPIO control interface, and minimal external components simplify the 2.4 GHz RF front-end design in an industry leading compact 1.8 mm × 1.8 mm footprint.
- PE566212 for robust, power-efficient IoT links: Supports Bluetooth BDR and Bluetooth Low Energy (BLE) at up to +20 dBm output power, with 22.5 dB of transmit digital gain control in 1.5-dB steps.
- PE566213 for enhanced Bluetooth throughput: Supports Bluetooth BDR and BLE up to +20 dBm and Bluetooth EDR at up to +11.5 dBm, with 15 dB of transmit digital gain control in 1.0 dB steps. The FEM is ideal for wireless audio, wearables, and other throughput-focused applications.
- A new, trusted FEM source: The portfolio builds on more than three decades of pSemi RF innovation and its proven UltraCMOS+ technology, which is actively deployed in switch solutions worldwide. Both FEMs are supported by the renowned quality legacy of pSemi and Murata.
The PE566212 and PE566213, along with evaluation boards, are available now. Additional product information can be found at PE566212 and PE566213, or by contacting sales@psemi.com.
About pSemi
pSemi (formerly Peregrine Semiconductor) is a leader in the design and development of semiconductor integration, providing world-class capabilities with high-performance RF, analog and mixed signal solutions. With a 30-year legacy of technology advancements, strong IP portfolio and deep expertise in RF integration, our solution portfolio spans power management, connected sensors, antenna tuning, and RF frontends, which enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices, healthcare and more. A wholly owned subsidiary of Murata Electronics North America, Inc., pSemi is headquartered in San Diego, with additional offices spanning North America, Europe, and Asia. For more information, please visit www.psemi.com and connect with us on LinkedIn at https://www.linkedin.com/company/psemi/.