Peregrine’s New SP6T All-Tx RF Switch Delivers Fully Symmetric Flexibility

UltraCMOS™ RFIC offers cost-optimized solution for any mode, any band, any path

San Diego, California, September 13, 2010 — Peregrine Semiconductor Corporation, a leading supplier of high- performance RF CMOS and mixed-signal communications ICs, today announced the new PE42662 SP6T (single pole, six throw) RF switch. As the industry’s first fully symmetric RF switch, the PE42662 delivers unprecedented design flexibility to manufacturers of 3G front-end modules used in multi-band GSM/EDGE/WCDMA handsets. The switch incorporates six fully symmetric transmit ports that allow designers to freely configure any combination of transmit/receive ports for GSM, EDGE and WCDMA for the first time. The PE42662 is the latest release in Peregrine’s UltraCMOS™ silicon-on-sapphire (SOS) mobile wireless switch portfolio targeted at the high-volume cellular handset market.

The 50-Ohm switch is manufactured on Peregrine’s STeP 3 UltraCMOS process and features HaRP™ technology enhancements to deliver high linearity and exceptional harmonic performance: 2fo/3fo = -40 dBm @ 35 dBm TX (900 MHz) and 33 dBm TX (1900 MHz). The PE42662 switch also features an IIP3 of +68 dBm at 50-Ohm; low transmit insertion loss of 0.5 dB at 900 MHz, 0.6dB at 1900MHz; and very high Isolation of 38dB at 900MHz and 33dB at 1900MHz. The switch handles maximum +35 dBm input power with world-class ESD tolerance of 4000V HBM at ANT port, and 2000V HBM on all ports.

“The combination of performance and design flexibility of Peregrine’s new PE42662 raises the bar for RF switches,” said Dylan Kelly, vice president of Mobile Wireless Solutions business unit at Peregrine Semiconductor. “RF front- end module designers can now develop cleaner layouts with a common universal die, reduce time and cost in the development process, and still address the multiple variations required to support different modules and 3G handsets without compromising increased feature integration, ruggedness and high performance,” he added.

Additional features of the PE42662 switch include an on-chip CMOS decode logic that facilitates three-pin low voltage CMOS control and low-power standby state, as well as on-chip SAW filter over-voltage protection devices. As with all SOS-based UltraCMOS RFICs, no blocking capacitors are required.

The PE42662 is available in the highly efficient flip-chip die form in volume today. Pricing is available by contacting Peregrine’s worldwide sales and distribution network.

About UltraCMOS™ Technology

UltraCMOS mixed-signal process technology is a patented advancement of silicon-on-insulator (SOI) technology on a sapphire substrate providing high yields, competitive costs and a viable alternative to compound semiconductor technologies. UltraCMOS delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and high levels of integration are paramount. These measureable power and size savings offer advantages for both manufacturers and consumers, including longer battery life, smaller batteries, lower power consumption and bills, less electronic waste…and a greener RF solution. Further, the company’s revolutionary HaRP™ and DuNE™ technologies further exploit the fundamental benefits of silicon-on-sapphire, enabling dramatic improvements in harmonic results, linearity, power handling and overall RF performance which today remain unmatched by any other RF process technology.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband communications and infrastructure; and high- reliability markets. Manufactured on the Company’s proprietary UltraCMOS mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as LTE, HSDPA and WCDMA digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with CMOS semiconductor manufacturers located throughout the world. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.

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The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
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    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
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