Peregrine’s New UltraCMOS® Antenna Switch Drives RF Performance in Samsung Galaxy S4 LTE-A Smartphone

Dual SP7T MultiSwitch™ solves complex carrier aggregation challenges

San Diego, California, Sept 17, 2013 Peregrine Semiconductor Corporation (NASDAQ: PSMI), a fabless provider of high-performance radio frequency integrated circuits (RFICs), today announced that it supplies the main antenna switch driving RF performance in the Samsung Galaxy S4 LTE-Advanced (LTE-A) smartphone. The PE421280 MultiSwitch was selected for its ability to support simultaneous multi-band operation of up to 14 frequency bands while delivering exceptional linearity, insertion loss performance and small size.

The Samsung Galaxy S4 is touted as the first-ever implementation on the 4G LTE-A network. The LTE-A protocol uses carrier aggregation – or the simultaneous reception of multiple frequency bands – to improve data throughput. According to Samsung, a three-minute download over 4G LTE would only take about one minute on 4G LTE-A.

“The data throughput enabled by LTE-A dramatically improves the wireless experience, and we are pleased to support a leader like Samsung in delivering this technology to consumers,” said Jim Cable, CEO of Peregrine Semiconductor. “Peregrine’s MultiSwitch devices are designed specifically to solve the challenges of carrier aggregation as used in LTE-A platforms. Based on our UltraCMOS technology, the devices feature not only the linearity required for simultaneous, multi-band switching performance, but also the integration, low power, and manufacturability required of high-volume consumer applications.“

Peregrine’s PE421280 antenna switch features an innovative combination of two SP7T switches in a single IC to support 14 different frequency bands including simultaneous multi-band operation. With HaRP™ technology enhancements, the PE421280 delivers high linearity with an IIP3 of +75 dBm, as well as extremely low insertion loss (0.35dB @ 900MHz; and 0.45 at 1900 MHz) and high isolation (38 dB at 698-2170 MHz; and 33 dB at 2500-2690 MHz). The switch also features industry-leading 2fo and 3fo for LTE of less than -80 dBm at 700 MHz. High linearity and isolation performance are critical to ensure that radio signals don’t spill into other bands during multi-band operation.

About Peregrine Semiconductor

Peregrine Semiconductor (NASDAQ: PSMI) is a fabless provider of high-performance radio frequency integrated circuits (RFICs). Our solutions leverage our proprietary UltraCMOS® technology, an advanced RF Silicon-On-Insulator process. Our products deliver what we believe is an industry-leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. Additional information is available at https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. DuNE, and HaRP are trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.

 

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
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    Broadband quad MOSFET array cores for high performance
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    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
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    +105°C operating temperature
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    Unique, patented architecture to enable higher overall system, power conversion efficiency
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    Virtually lossless (up to 99% peak) conversion and soft-switching topology
    Parallel operation to higher power levels
    Available through our parent company Murata
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    Family of DC-DC buck voltage regulators ICs and modules for telecoms, datacoms, server and storage applications
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    Available through our parent company Murata
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    Product family includes products for 1-cell, 2-cell, and 3-cell inputs such as tablets, notebooks and 2-in-1 convertibles
    Enables very low profile (<0.7 mm) solutions and halves power-conversion losses compared to leading alternatives
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    High accuracy with tight matching at low LED current
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    Industry-first 4-level and 3-level conversion for fixed input voltages (USB_PD)
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    Targets fast-charging battery applications

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