Category: Press Releases

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

Application Note: Introduction and Operation of the PE42020 True DC RF Switch

PE4270

UltraCMOS® SPST CATV Switch

Integrated 0.25 watt terminations

CTB performance of 90 dBc

High isolation: 90 dB at 5 MHz, 63 dB at 1000 MHz

Low insertion loss: 0.5 dB at 50 MHz, 0.70 dB at 1000 MHz

High input IP2: >80 dBm

CMOS/TTL single-pin control

Single +3-volt supply operation

Extremely low bias: 8 µA @ 3V

Packaging: 6-lead DFN

Application Note: Replacing PE4246 with PE4270

Application Note: Using a 50Ω Switch Within a 75Ω System

Application Note: Using Blocking Capacitors with UltraCMOS® Devices

PE42420

UltraCMOS® SPDT RF Switch

HaRP™ technology-enhanced

High linearity

High isolation

Supports +1.8V control logic

+105 °C operating temperature

High ESD tolerance

Application Note: Soldering Guidelines for Land Grid Array Packages

Video

Application Note: Using a 50Ω Switch Within a 75Ω System

Application Note: Bias and Sequence of the PE42420 RF Switch

PCN: Operating Temperature Range

PCN: Manufacturing Site, Pmax and Order Codes

PCN: Assembly Site, Manufacturing Site and Order Codes

PCN: Wafer Fabrication and Order Codes

PCN: Assembly Process and Order Codes

PE42423

UltraCMOS® SPDT RF Switch

802.11 a/b/g/n/ac support

Wide supply range of 2.3V to 5.5V

+1.8V control logic compatible

Exceptional isolation

High linearity across supply range

High power handling

Fast switching time of 500 ns

High ESD tolerance

Packaging: 16-lead 3 × 3 mm QFN

Application Note: Soldering Guidelines for Land Grid Array Packages

Video

Application Note: Using a 50Ω Switch Within a 75Ω System

PCN: Wafer Fabrication and Order Codes

PE42424

UltraCMOS® SPDT RF Switch

802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband

(UWB) support

Exceptional isolation

Fast switching

High power handling

High linearity across supply range

1.8V control logic compatible

105°C operating temperature

High ESD tolerance

Packaging: 6-lead 1.5 × 1.5 mm DFN

Application Note: Understanding Switch Linearity Performance

Video

Application Note: Using a 50Ω Switch Within a 75Ω System

PCN: Frequency Range

PE4257

UltraCMOS® SPDT RF Switch

50Ω characteristic impedance

Integrated 50Ω 0.25 W terminations

High input IP3 > +55 dBm

High isolation 64 dB at 1000 MHz

Low insertion loss: typically 0.75 dB at 1000 MHz and 0.95 dB at 2000 MHz

LV CMOS two-pin control

Single +3 V supply operation

Low current consumption: 8 µA

Application Note: Using a 50Ω Switch Within a 75Ω System

Application Note: Using Blocking Capacitors with UltraCMOS® Devices

PE42422

UltraCMOS® SPDT RF Switch

Symmetric SPDT reflective switch

Low insertion loss

Wide supply range of 2.3–5.5 V

Excellent linearity

High ESD tolerance

Logic Select (LS) pin provides maximum flexibility of control logic

Packaging: 12-lead 2 × 2 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

IPC-1752-2 Class 6 Form

Application Note: Using a 50Ω Switch Within a 75Ω System

Application Note: Using Blocking Capacitors with UltraCMOS® Devices

Application Note: Using the PE42422 and PE423422 in Wi-Fi 6E and 7 Applications

PE42426

UltraCMOS® SPDT RF Switch

Best-in-class linearity across frequency band

Exceptional harmonics

Low insertion loss and high isolation performance

High ESD performance of 3 kV HBM

Packaging: 12-lead 3 × 3 × 0.75 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

PE42427

UltraCMOS® SPDT RF Switch

Symmetric SPDT reflective switch

Low insertion loss

Low spurious performance of -163 dBm/Hz

Wide supply range of 2.3-5.5V

Excellent linearity

High ESD tolerance

Logic Select (LS) pin provides maximum flexibility of control logic

Packaging: 12-lead 2 × 2 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

Application Note: Using a 50Ω Switch Within a 75Ω System

Application Note: Using Blocking Capacitors with UltraCMOS® Devices

PCN: Product Specification

PE42722

UltraCMOS® SPDT RF Switch

Supports DOCSIS 3.0/1 requirements

Exceptional harmonics performance

Best in class linearity across frequency band

Low insertion loss and high isolation performance

High ESD performance of 1.5 kV HBM

Packaging – 32-lead 5 × 5 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

Application Note: Using a 50Ω Switch Within a 75Ω System

PCN: Wafer Fabrication and Order Codes

PE42721

UltraCMOS® SPDT RF Switch

HaRP™ technology enhanced

Supports +1.8V control logic

Low insertion loss

High isolation

ESD performance

Packaging: 12-lead 3 × 3 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components

Application Note: Using a 50Ω Switch Within a 75Ω System

PE42723

UltraCMOS® SPDT RF Switch

Supports DOCSIS 3.0/1 requirements

Exceptional harmonics

2fo of –121 dBc @ 17 MHz

3fo of –140 dBc @ 17 MHz

Best in class linearity across frequency band

Low insertion loss and high isolation performance

Insertion loss of 0.3 dB @ 1218 MHz

Isolation of 54 dB @ 204 MHz

High ESD performance of 3 kV HBM

Packaging: 12-lead 3 × 3 mm QFN

Application Note: Soldering Guidelines for Mounting Bottom-terminated Components